Optical and photo-carrier characterization of ultra-shallow junctions in silicon
文献类型：期刊论文
| 作者 | Huang, Qiuping1,2; Li, Bincheng1; Ren, Shengdong1,2 |
| 刊名 | Science China: Physics, Mechanics and Astronomy
 |
| 出版日期 | 2013 |
| 卷号 | 56期号:7页码:1294-1300 |
| ISSN号 | 16747348 |
| 通讯作者 | Li, B. (bcli@ioe.ac.cn) |
| 中文摘要 | Spectroscopic ellipsometry (SE), photocarrier radiometry (PCR) and photoluminescence (PL) techniques were employed to measure the ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5-5 keV, at a dose of 1×1015 As+/cm2 and spike annealing. Experimentally the damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 to 20 μm. The PCR amplitude decreased monotonically with the increasing implantation energy. The experimental results also showed that the PCR amplitudes of post-annealed USJ wafers were greatly enhanced, compared to the non-implanted and non-annealed substrate wafer. The PL measurements showed the enhanced PCR signals were attributed to the band-edge emissions of silicon. For explaining the PL enhancement, the electronic transport properties of USJ wafers were extracted via multi-wavelength PCR experiment and fitting. The fitted results showed the decreasing surface recombination velocity and the decreasing diffusion coefficient of the implanted layer contributed to the PCR signal enhancement with the decreasing implantation energy. SE, PCR and PL were proven to be non-destructive metrology tools for characterizing ultra-shallow junctions. © 2013 Science China Press and Springer-Verlag Berlin Heidelberg. |
| 英文摘要 | Spectroscopic ellipsometry (SE), photocarrier radiometry (PCR) and photoluminescence (PL) techniques were employed to measure the ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5-5 keV, at a dose of 1×1015 As+/cm2 and spike annealing. Experimentally the damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 to 20 μm. The PCR amplitude decreased monotonically with the increasing implantation energy. The experimental results also showed that the PCR amplitudes of post-annealed USJ wafers were greatly enhanced, compared to the non-implanted and non-annealed substrate wafer. The PL measurements showed the enhanced PCR signals were attributed to the band-edge emissions of silicon. For explaining the PL enhancement, the electronic transport properties of USJ wafers were extracted via multi-wavelength PCR experiment and fitting. The fitted results showed the decreasing surface recombination velocity and the decreasing diffusion coefficient of the implanted layer contributed to the PCR signal enhancement with the decreasing implantation energy. SE, PCR and PL were proven to be non-destructive metrology tools for characterizing ultra-shallow junctions. © 2013 Science China Press and Springer-Verlag Berlin Heidelberg. |
| 学科主题 | Annealing - Diffusion - Ion implantation - Photoelectricity - Photoluminescence - Radiometers - Radiometry - Silicon - Spectroscopic ellipsometry - Transport properties |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000320502800009 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6620]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 1.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China 2.University of Chinese Academy of Sciences, Beijing 100039, China |
| 推荐引用方式 GB/T 7714 | Huang, Qiuping,Li, Bincheng,Ren, Shengdong. Optical and photo-carrier characterization of ultra-shallow junctions in silicon[J]. Science China: Physics, Mechanics and Astronomy,2013,56(7):1294-1300. |
| APA | Huang, Qiuping,Li, Bincheng,&Ren, Shengdong.(2013).Optical and photo-carrier characterization of ultra-shallow junctions in silicon.Science China: Physics, Mechanics and Astronomy,56(7),1294-1300. |
| MLA | Huang, Qiuping,et al."Optical and photo-carrier characterization of ultra-shallow junctions in silicon".Science China: Physics, Mechanics and Astronomy 56.7(2013):1294-1300. |
入库方式： OAI收割
来源：光电技术研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。