Characterization of silicon wafers with combined photocarrier radiometry and free carrier absorption
文献类型：期刊论文
| 作者 | Li, Bincheng1; Huang, Qiuping1,2; Ren, Shengdong1,2 |
| 刊名 | International Journal of Thermophysics
 |
| 出版日期 | 2013 |
| 卷号 | 34期号:8-9页码:1735-1745 |
| ISSN号 | 0195928X |
| 通讯作者 | Li, B. (bcli@ioe.ac.cn) |
| 中文摘要 | A combined photocarrier radiometry (PCR) and free carrier absorption (FCA) technique was employed to evaluate the electronic transport properties (carrier lifetime τ, diffusion coefficient D, and the front surface recombination velocity S1) of silicon wafers and to monitor the ion implantation and thermal annealing processes in the semiconductor manufacturing. For non-implanted silicon wafers, the experimental results showed that the accuracy of the simultaneous determination of the transport properties was greatly improved by fitting simultaneously the measured PCR and FCA signals to the theoretical models via a multi-parameter fitting procedure. For As+ ion implanted and thermal annealed silicon wafers, the results showed that both PCR and FCA amplitudes increased monotonically with the increasing implantation dose (5 × 1011 cm-2 to 1 × 1016 cm-2), the decreasing implantation energy (20 keV to 140 keV), and the increasing annealing temperature (500 °C to 1000 °C), respectively. To explain the dependences of the PCR signals on the implantation and annealing parameters, a multi-wavelength PCR technique was proposed to extract the electronic transport properties of the implanted and annealed wafers. The results showed that ion implantation and thermal annealing caused significant decreases of the minority carrier lifetime and diffusion coefficient of the implantation layer, as well as the recombination velocity at the front surface. All three parameters decreased with the increasing implantation dose. © Springer Science+Business Media New York 2013. |
| 英文摘要 | A combined photocarrier radiometry (PCR) and free carrier absorption (FCA) technique was employed to evaluate the electronic transport properties (carrier lifetime τ, diffusion coefficient D, and the front surface recombination velocity S1) of silicon wafers and to monitor the ion implantation and thermal annealing processes in the semiconductor manufacturing. For non-implanted silicon wafers, the experimental results showed that the accuracy of the simultaneous determination of the transport properties was greatly improved by fitting simultaneously the measured PCR and FCA signals to the theoretical models via a multi-parameter fitting procedure. For As+ ion implanted and thermal annealed silicon wafers, the results showed that both PCR and FCA amplitudes increased monotonically with the increasing implantation dose (5 × 1011 cm-2 to 1 × 1016 cm-2), the decreasing implantation energy (20 keV to 140 keV), and the increasing annealing temperature (500 °C to 1000 °C), respectively. To explain the dependences of the PCR signals on the implantation and annealing parameters, a multi-wavelength PCR technique was proposed to extract the electronic transport properties of the implanted and annealed wafers. The results showed that ion implantation and thermal annealing caused significant decreases of the minority carrier lifetime and diffusion coefficient of the implantation layer, as well as the recombination velocity at the front surface. All three parameters decreased with the increasing implantation dose. © Springer Science+Business Media New York 2013. |
| 学科主题 | Annealing - Diffusion - Ion implantation - Photoelectricity - Polymerase chain reaction - Radiometry - Semiconductor device manufacture - Silicon - Silicon solar cells - Transport properties |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000325815500047 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6622]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 1.Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu 610209, Sichuan, China 2.Graduate University of the Chinese Academy of Sciences, Beijing 100039, China |
| 推荐引用方式 GB/T 7714 | Li, Bincheng,Huang, Qiuping,Ren, Shengdong. Characterization of silicon wafers with combined photocarrier radiometry and free carrier absorption[J]. International Journal of Thermophysics,2013,34(8-9):1735-1745. |
| APA | Li, Bincheng,Huang, Qiuping,&Ren, Shengdong.(2013).Characterization of silicon wafers with combined photocarrier radiometry and free carrier absorption.International Journal of Thermophysics,34(8-9),1735-1745. |
| MLA | Li, Bincheng,et al."Characterization of silicon wafers with combined photocarrier radiometry and free carrier absorption".International Journal of Thermophysics 34.8-9(2013):1735-1745. |
入库方式： OAI收割
来源：光电技术研究所
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