Carrier diffusivity measurement in silicon wafers using free carrier absorption
文献类型：期刊论文
| 作者 | Zhang, Xiren1,2; Li, Bincheng2 |
| 刊名 | International Journal of Thermophysics
 |
| 出版日期 | 2013 |
| 卷号 | 34期号:8-9页码:1721-1726 |
| ISSN号 | 0195928X |
| 通讯作者 | Zhang, X. (xiren3208@163.com) |
| 中文摘要 | In this article, it has been shown that the modulated free carrier absorption method (MFCA) can be used to determine unambiguously and without contact the carrier diffusivity of semiconductor wafers. The linear dependence of the phase on the distance of pump and probe beams are investigated with computer simulation, and then it has been found that at high frequency the slope of the MFCA phase versus distance depends solely on the carrier diffusivity. Hence, the carrier diffusivity can be extracted from the slope of the phase versus distance. Experiments were carried out on an n-type Si wafer with 7Ω·cm to 10Ω·cm resistivity and (525±20) μm thickness. Comparing the experimental fitted results to those by fitting the MFCA amplitude and phase on the pump-probe-beam separation measured at several modulation frequencies to the rigorous three-dimensional carrier diffusion model, the fitted results by both methods agreed well. This shows that the simplified model can be used to determine the carrier diffusivity with high precision. © Springer Science+Business Media New York 2013. |
| 英文摘要 | In this article, it has been shown that the modulated free carrier absorption method (MFCA) can be used to determine unambiguously and without contact the carrier diffusivity of semiconductor wafers. The linear dependence of the phase on the distance of pump and probe beams are investigated with computer simulation, and then it has been found that at high frequency the slope of the MFCA phase versus distance depends solely on the carrier diffusivity. Hence, the carrier diffusivity can be extracted from the slope of the phase versus distance. Experiments were carried out on an n-type Si wafer with 7Ω·cm to 10Ω·cm resistivity and (525±20) μm thickness. Comparing the experimental fitted results to those by fitting the MFCA amplitude and phase on the pump-probe-beam separation measured at several modulation frequencies to the rigorous three-dimensional carrier diffusion model, the fitted results by both methods agreed well. This shows that the simplified model can be used to determine the carrier diffusivity with high precision. © Springer Science+Business Media New York 2013. |
| 学科主题 | Computer simulation - Diffusion - Probes - Semiconductor materials |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000325815500045 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6627]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 1.School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China 2.Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu 610209, Sichuan, China |
| 推荐引用方式 GB/T 7714 | Zhang, Xiren,Li, Bincheng. Carrier diffusivity measurement in silicon wafers using free carrier absorption[J]. International Journal of Thermophysics,2013,34(8-9):1721-1726. |
| APA | Zhang, Xiren,&Li, Bincheng.(2013).Carrier diffusivity measurement in silicon wafers using free carrier absorption.International Journal of Thermophysics,34(8-9),1721-1726. |
| MLA | Zhang, Xiren,et al."Carrier diffusivity measurement in silicon wafers using free carrier absorption".International Journal of Thermophysics 34.8-9(2013):1721-1726. |
入库方式： OAI收割
来源：光电技术研究所
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