Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation
文献类型：期刊论文
| 作者 | Wang, Qian1,2; Li, Bincheng1; Ren, Shengdong1,2; Wang, Qiang1 |
| 刊名 | International Journal of Thermophysics
 |
| 出版日期 | 2015 |
| 卷号 | 36期号:5-6页码:1173-1180 |
| ISSN号 | 0195-928X |
| 通讯作者 | Li, Bincheng |
| 中文摘要 | The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of 1×1015 cm-2 and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated. © 2014, Springer Science+Business Media New York. |
| 英文摘要 | The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of 1×1015 cm-2 and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated. © 2014, Springer Science+Business Media New York. |
| 学科主题 | Arsenic - Excimer lasers - Ion implantation - Ions - Irradiation - Laser beam effects - Photoelectricity - Radiometry - Silicon |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000356611100050 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6643]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 1.Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu 2.Sichuan, China 3.University of the Chinese Academy of Sciences, Beijing, China |
| 推荐引用方式 GB/T 7714 | Wang, Qian,Li, Bincheng,Ren, Shengdong,et al. Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation[J]. International Journal of Thermophysics,2015,36(5-6):1173-1180. |
| APA | Wang, Qian,Li, Bincheng,Ren, Shengdong,&Wang, Qiang.(2015).Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation.International Journal of Thermophysics,36(5-6),1173-1180. |
| MLA | Wang, Qian,et al."Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation".International Journal of Thermophysics 36.5-6(2015):1173-1180. |
入库方式： OAI收割
来源：光电技术研究所
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