Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation
文献类型：期刊论文
| 作者 | Li, Yanyue1; Deng, Xiaochuan1; Liu, Yunfeng2; Zhao, Yanli3; Li, Chengzhan3; Chen, Xixi1; Zhang, Bo1 |
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2015 |
| 卷号 | 36期号:9 |
| ISSN号 | 1674-4926 |
| 通讯作者 | Deng, Xiaochuan |
| 中文摘要 | The interface properties of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with post-oxidation annealing (POA) in nitric oxide (NO) ambient after high temperature (1300 °C) oxidation have been investigated using capacitance-voltage (C-V) measurements. The experimental results show that the interface states density (Dit) can be obviously decreased by the POA in NO ambient (NO-POA) and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Diton POA temperature and time has been also discussed in detail. © 2015 Chinese Institute of Electronics. |
| 英文摘要 | The interface properties of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with post-oxidation annealing (POA) in nitric oxide (NO) ambient after high temperature (1300 °C) oxidation have been investigated using capacitance-voltage (C-V) measurements. The experimental results show that the interface states density (Dit) can be obviously decreased by the POA in NO ambient (NO-POA) and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Diton POA temperature and time has been also discussed in detail. © 2015 Chinese Institute of Electronics. |
| 学科主题 | Annealing - Capacitance - Metals - MOS capacitors - MOS devices - Nitric oxide - Oxidation - Silicon carbide |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/5086]  |
| 专题 | 光电技术研究所_光电探测与信号处理研究室（五室） |
| 作者单位 | 1.State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China 2.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China 3.Power Electronics Business Unit, Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou, China |
| 推荐引用方式 GB/T 7714 | Li, Yanyue,Deng, Xiaochuan,Liu, Yunfeng,et al. Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation[J]. Journal of Semiconductors,2015,36(9). |
| APA | Li, Yanyue.,Deng, Xiaochuan.,Liu, Yunfeng.,Zhao, Yanli.,Li, Chengzhan.,...&Zhang, Bo.(2015).Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation.Journal of Semiconductors,36(9). |
| MLA | Li, Yanyue,et al."Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2after high temperature oxidation".Journal of Semiconductors 36.9(2015). |
入库方式： OAI收割
来源：光电技术研究所
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