Interferometric Scheme for High-Sensitivity Coaxial Focusing in Projection Lithography
文献类型：期刊论文
| 作者 | Di, Chengliang; Hu, Song; Yan, Wei; Li, Yanli; Li, Guang; Tong, Junmin |
| 刊名 | IEEE PHOTONICS JOURNAL
 |
| 出版日期 | 2014 |
| 卷号 | 6期号:3 |
| ISSN号 | 1943-0655 |
| 通讯作者 | Di, CL (reprint author), Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Microfabricat, Chengdu 610209, Peoples R China. |
| 中文摘要 | Focusing of wafer plane is an essential factor to determine the ultimate feature size of the stepper such as projection lithographic system. Based on Michelson interferometeric system, this paper demonstrates an interferometric focusing scheme for projection lithography to coaxially locate the ideal focal plane of the projective objective. The collimated incident laser beam is divided into the reference arm and object arm. The latter propagates through the objective lens and then interferes with the slightly deflected reference beam that reflected back by a fixed mirror, giving rise to an interferential pattern on the CCD. Any amounts of defocusing can be directly indicated from the demodulated phase of the interferential pattern. In this manner, the focusing sensitivity at nanometer scale is experimentally attainable, which shows great superiority over traditional methods, particularly the limited focal length of current projective objective lens. |
| 英文摘要 | Focusing of wafer plane is an essential factor to determine the ultimate feature size of the stepper such as projection lithographic system. Based on Michelson interferometeric system, this paper demonstrates an interferometric focusing scheme for projection lithography to coaxially locate the ideal focal plane of the projective objective. The collimated incident laser beam is divided into the reference arm and object arm. The latter propagates through the objective lens and then interferes with the slightly deflected reference beam that reflected back by a fixed mirror, giving rise to an interferential pattern on the CCD. Any amounts of defocusing can be directly indicated from the demodulated phase of the interferential pattern. In this manner, the focusing sensitivity at nanometer scale is experimentally attainable, which shows great superiority over traditional methods, particularly the limited focal length of current projective objective lens. |
| 学科主题 | Interferometry; metrology; fringe analysis; phase unwrapping; lithography |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000340830400010 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/7292]  |
| 专题 | 光电技术研究所_微电子装备总体研究室（四室） |
| 作者单位 | 1.[Di, Chengliang 2.Hu, Song 3.Yan, Wei 4.Li, Yanli 5.Li, Guang] Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Microfabricat, Chengdu 610209, Peoples R China 6.[Di, Chengliang 7.Li, Guang] Univ Chinese Acad Sci, Beijing 100049, Peoples R China 8.[Tong, Junmin] Xuchang Vocat & Tech Coll, Xuchang 461000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Di, Chengliang,Hu, Song,Yan, Wei,et al. Interferometric Scheme for High-Sensitivity Coaxial Focusing in Projection Lithography[J]. IEEE PHOTONICS JOURNAL,2014,6(3). |
| APA | Di, Chengliang,Hu, Song,Yan, Wei,Li, Yanli,Li, Guang,&Tong, Junmin.(2014).Interferometric Scheme for High-Sensitivity Coaxial Focusing in Projection Lithography.IEEE PHOTONICS JOURNAL,6(3). |
| MLA | Di, Chengliang,et al."Interferometric Scheme for High-Sensitivity Coaxial Focusing in Projection Lithography".IEEE PHOTONICS JOURNAL 6.3(2014). |
入库方式： OAI收割
来源：光电技术研究所
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