Moiré interferometry with high alignment resolution in proximity lithographic process
文献类型：期刊论文
| 作者 | Zhou, Shaolin1,4; Hu, Song2; Fu, Yongqi3; Xu, Xiangmin1; Yang, Jun4 |
| 刊名 | Applied Optics
 |
| 出版日期 | 2014 |
| 卷号 | 53期号:5页码:951-959 |
| ISSN号 | 1559-128X |
| 通讯作者 | Fu, Yongqi |
| 中文摘要 | Moiré interferometry is widely used as the precise metrology in many science and engineering fields. The schemes of moirés-based interferometry adopting diffraction gratings are presented in this paper for applications in a proximity lithographic system such as wafer-mask alignment, the in-plane twist angle adjustment, and tilts remediation. For the sake of adjustment of lateral offset as well as the tilt and in-plane twist angle, schemes of the (m;-m) and (m;0) moiré interferometry are explored, respectively. Fundamental derivation of the moiré interferometry and schemes for related applications are provided. Three pairs of gratings with close periods are fabricated to form the composite grating. And experiments are performed to confirm the moiré interferometry for related applications in our proximity lithographic system. Experimental results indicate that unaligned lateral offset is detectable with resolution at the nanometer level, and the tilt and in-plane twist angle between wafer and mask could be manually decreased down to the scope of 10-3and 10-4rad, respectively. © 2014 Optical Society of America. |
| 英文摘要 | Moiré interferometry is widely used as the precise metrology in many science and engineering fields. The schemes of moirés-based interferometry adopting diffraction gratings are presented in this paper for applications in a proximity lithographic system such as wafer-mask alignment, the in-plane twist angle adjustment, and tilts remediation. For the sake of adjustment of lateral offset as well as the tilt and in-plane twist angle, schemes of the (m;-m) and (m;0) moiré interferometry are explored, respectively. Fundamental derivation of the moiré interferometry and schemes for related applications are provided. Three pairs of gratings with close periods are fabricated to form the composite grating. And experiments are performed to confirm the moiré interferometry for related applications in our proximity lithographic system. Experimental results indicate that unaligned lateral offset is detectable with resolution at the nanometer level, and the tilt and in-plane twist angle between wafer and mask could be manually decreased down to the scope of 10-3and 10-4rad, respectively. © 2014 Optical Society of America. |
| 学科主题 | Alignment - Diffraction gratings |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000331368300022 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/7305]  |
| 专题 | 光电技术研究所_微电子装备总体研究室（四室） |
| 作者单位 | 1.School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China 2.State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China 3.School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China 4.Department of Mechanical and Materials Engineering, Western University (The University of Western Ontario), London 5.ON, Canada |
| 推荐引用方式 GB/T 7714 | Zhou, Shaolin,Hu, Song,Fu, Yongqi,et al. Moiré interferometry with high alignment resolution in proximity lithographic process[J]. Applied Optics,2014,53(5):951-959. |
| APA | Zhou, Shaolin,Hu, Song,Fu, Yongqi,Xu, Xiangmin,&Yang, Jun.(2014).Moiré interferometry with high alignment resolution in proximity lithographic process.Applied Optics,53(5),951-959. |
| MLA | Zhou, Shaolin,et al."Moiré interferometry with high alignment resolution in proximity lithographic process".Applied Optics 53.5(2014):951-959. |
入库方式： OAI收割
来源：光电技术研究所
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