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Engineering heavily doped silicon for broadband absorber in the terahertz regime
文献类型：期刊论文
| 作者 | Pu, Mingbo; Wang, Min; Hu, Chenggang; Huang, Cheng; Zhao, Zeyu; Wang, Yanqin; Luo, Xiangang |
| 刊名 | Optics Express
 |
| 出版日期 | 2012 |
| 卷号 | 20期号:23页码:25513-25519 |
| 通讯作者 | Pu, M. |
| 中文摘要 | Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Ω cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration. © 2012 Optical Society of America. |
| 英文摘要 | Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped silicon (0.7676 Ω cm) grating. It is numerically demonstrated by utilizing both the zero- and first order diffraction in the doped silicon wafer, relative absorption bandwidth larger than 100% can be achieved. Furthermore, the design can be easily extended to higher frequencies as the optical property of doped silicon is tunable through changing the doping concentration. © 2012 Optical Society of America. |
| 学科主题 | Frequency bands - Optical properties - Silicon |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000311340300060 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6802]  |
| 专题 | 光电技术研究所_微细加工光学技术国家重点实验室（开放室） |
| 作者单位 | State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China |
| 推荐引用方式 GB/T 7714 | Pu, Mingbo,Wang, Min,Hu, Chenggang,et al. Engineering heavily doped silicon for broadband absorber in the terahertz regime[J]. Optics Express,2012,20(23):25513-25519. |
| APA | Pu, Mingbo.,Wang, Min.,Hu, Chenggang.,Huang, Cheng.,Zhao, Zeyu.,...&Luo, Xiangang.(2012).Engineering heavily doped silicon for broadband absorber in the terahertz regime.Optics Express,20(23),25513-25519. |
| MLA | Pu, Mingbo,et al."Engineering heavily doped silicon for broadband absorber in the terahertz regime".Optics Express 20.23(2012):25513-25519. |
入库方式： OAI收割
来源：光电技术研究所
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