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Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing
文献类型：期刊论文
| 作者 | Yang, Jing; Luo, Fangfang; Kao, Tsung Sheng; Li, Xiong; Ho, Ghim Wei; Teng, Jinghua; Luo, Xiangang; Hong, Minghui |
| 刊名 | LIGHT-SCIENCE & APPLICATIONS
 |
| 出版日期 | 2014 |
| 卷号 | 3 |
| ISSN号 | 2047-7538 |
| 通讯作者 | Hong, MH (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore 117576, Singapore. |
| 中文摘要 | Light collection efficiency is an important factor that affects the performance of many optical and optoelectronic devices. In these devices, the high reflectivity of interfaces can hinder efficient light collection. To minimize unwanted reflection, anti-reflection surfaces can be fabricated by micro/nanopatterning. In this paper, we investigate the fabrication of broadband anti-reflection Si surfaces by laser micro/nanoprocessing. Laser direct writing is applied to create microstructures on Si surfaces that reduce light reflection by light trapping. In addition, laser interference lithography and metal assisted chemical etching are adopted to fabricate the Si nanowire arrays. The anti-reflection performance is greatly improved by the high aspect ratio subwavelength structures, which create gradients of refractive index from the ambient air to the substrate. Furthermore, by decoration of the Si nanowires with metallic nanoparticles, surface plasmon resonance can be used to further control the broadband reflections, reducing the reflection to below 1.0% across from 300 to 1200 nm. An average reflection of 0.8% is achieved. |
| 英文摘要 | Light collection efficiency is an important factor that affects the performance of many optical and optoelectronic devices. In these devices, the high reflectivity of interfaces can hinder efficient light collection. To minimize unwanted reflection, anti-reflection surfaces can be fabricated by micro/nanopatterning. In this paper, we investigate the fabrication of broadband anti-reflection Si surfaces by laser micro/nanoprocessing. Laser direct writing is applied to create microstructures on Si surfaces that reduce light reflection by light trapping. In addition, laser interference lithography and metal assisted chemical etching are adopted to fabricate the Si nanowire arrays. The anti-reflection performance is greatly improved by the high aspect ratio subwavelength structures, which create gradients of refractive index from the ambient air to the substrate. Furthermore, by decoration of the Si nanowires with metallic nanoparticles, surface plasmon resonance can be used to further control the broadband reflections, reducing the reflection to below 1.0% across from 300 to 1200 nm. An average reflection of 0.8% is achieved. |
| 学科主题 | anti-reflection; broadband; laser micro/nanoprocessing; surface plasmons |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000345187300001 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6847]  |
| 专题 | 光电技术研究所_微细加工光学技术国家重点实验室（开放室） |
| 作者单位 | 1.[Yang, Jing 2.Luo, Fangfang 3.Kao, Tsung Sheng 4.Ho, Ghim Wei 5.Hong, Minghui] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore 6.[Yang, Jing 7.Teng, Jinghua] Agcy Sci Technol & Res, Inst Mat Res & Engn, Singapore 117602, Singapore 8.[Yang, Jing] Natl Univ Singapore, NUS Environm Res Inst, Singapore 117411, Singapore 9.[Li, Xiong 10.Luo, Xiangang] Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Microfabricat, Chengdu 610209, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Jing,Luo, Fangfang,Kao, Tsung Sheng,et al. Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing[J]. LIGHT-SCIENCE & APPLICATIONS,2014,3. |
| APA | Yang, Jing.,Luo, Fangfang.,Kao, Tsung Sheng.,Li, Xiong.,Ho, Ghim Wei.,...&Hong, Minghui.(2014).Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing.LIGHT-SCIENCE & APPLICATIONS,3. |
| MLA | Yang, Jing,et al."Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing".LIGHT-SCIENCE & APPLICATIONS 3(2014). |
入库方式： OAI收割
来源：光电技术研究所
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