248 nm imaging photolithography assisted by surface plasmon polariton interference
文献类型：期刊论文
| 作者 | Tian, Man-man1; Mi, Jia-jia1; Shi, Jian-ping1; Wei, Nan-nan1; Zhan, Ling-li1; Huang, Wan-xia1; Zuo, Ze-wen1; Wang, Chang-tao2; Luo, Xian-gang2 |
| 刊名 | Optoelectronics Letters
 |
| 出版日期 | 2014 |
| 卷号 | 10期号:1页码:24-26 |
| ISSN号 | 16731905 |
| 通讯作者 | Shi, J.-P. (shi_jian_ping@hotmail.com) |
| 中文摘要 | A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations. The basic structure consists of surface plasmon polariton (SPP) interference mask and multi-layer film superlens. Using the amplification effect of superlens on evanescent wave, the near field SPP interference pattern is imaged to the far field, and then is exposed on photo resist (PR). The simulation results based on finite difference time domain (FDTD) method show that the full width at half maximum (FWHM) of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure. Meanwhile, the focal depth is 150 nm for negative PR and 60 nm for positive PR, which is much greater than that in usual SPP photolithography. © 2014 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg. |
| 英文摘要 | A new photolithography technique for 248 nm based on the interference of surface plasmon waves is proposed and demonstrated by using computer simulations. The basic structure consists of surface plasmon polariton (SPP) interference mask and multi-layer film superlens. Using the amplification effect of superlens on evanescent wave, the near field SPP interference pattern is imaged to the far field, and then is exposed on photo resist (PR). The simulation results based on finite difference time domain (FDTD) method show that the full width at half maximum (FWHM) of the interference pattern is about 19 nm when the p-polarization light from 248 nm source is vertically incident to the structure. Meanwhile, the focal depth is 150 nm for negative PR and 60 nm for positive PR, which is much greater than that in usual SPP photolithography. © 2014 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg. |
| 学科主题 | Computer simulation - Electromagnetic wave polarization - Finite difference time domain method - Photolithography - Plasmons - Time domain analysis |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6869]  |
| 专题 | 光电技术研究所_微细加工光学技术国家重点实验室（开放室） |
| 作者单位 | 1.College of Physics and Electronic Information, Anhui Normal University, Wuhu, 241000, China 2.State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, 610209, China |
| 推荐引用方式 GB/T 7714 | Tian, Man-man,Mi, Jia-jia,Shi, Jian-ping,et al. 248 nm imaging photolithography assisted by surface plasmon polariton interference[J]. Optoelectronics Letters,2014,10(1):24-26. |
| APA | Tian, Man-man.,Mi, Jia-jia.,Shi, Jian-ping.,Wei, Nan-nan.,Zhan, Ling-li.,...&Luo, Xian-gang.(2014).248 nm imaging photolithography assisted by surface plasmon polariton interference.Optoelectronics Letters,10(1),24-26. |
| MLA | Tian, Man-man,et al."248 nm imaging photolithography assisted by surface plasmon polariton interference".Optoelectronics Letters 10.1(2014):24-26. |
入库方式： OAI收割
来源：光电技术研究所
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