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Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens
文献类型：期刊论文
| 作者 | Gao, Ping; Yao, Na; Wang, Changtao; Zhao, Zeyu; Luo, Yunfei; Wang, Yanqin; Gao, Guohan; Liu, Kaipeng; Zhao, Chengwei; Luo, Xiangang |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2015 |
| 卷号 | 106期号:9页码:93110 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Gao, P (reprint author), Chinese Acad Sci, State Key Lab Opt Technol Nanofabricat & Microeng, Chengdu 610209, Peoples R China. |
| 中文摘要 | Poor aspect profiles of plasmonic lithography patterns are suffering from evanescent waves' scattering loss in metal films and decaying exposure in photoresist. To address this issue, we experimentally report plasmonic cavity lens to enhance aspect profile and resolution of plasmonic lithography. The profile depth of half-pitch (hp) 32 nm resist patterns is experimentally improved up to 23 nm, exceeding in the reported sub-10 nm photoresist depth. The resist patterns are then transferred to bottom resist patterns with 80 nm depth using hard-mask technology and etching steps. The resolution of plasmonic cavity lens up to hp 22 nm is experimentally demonstrated. The enhancement of the aspect profile and resolution is mainly attributed to evanescent waves amplifying from the bottom silver layer and scattering loss reduction with smooth silver films in plasmonic cavity lens. Further, theoretical near-field exposure model is utilized to evaluate aspect profile with plasmonic cavity lens and well illustrates the experimental results. (C) 2015 AIP Publishing LLC. |
| 英文摘要 | Poor aspect profiles of plasmonic lithography patterns are suffering from evanescent waves' scattering loss in metal films and decaying exposure in photoresist. To address this issue, we experimentally report plasmonic cavity lens to enhance aspect profile and resolution of plasmonic lithography. The profile depth of half-pitch (hp) 32 nm resist patterns is experimentally improved up to 23 nm, exceeding in the reported sub-10 nm photoresist depth. The resist patterns are then transferred to bottom resist patterns with 80 nm depth using hard-mask technology and etching steps. The resolution of plasmonic cavity lens up to hp 22 nm is experimentally demonstrated. The enhancement of the aspect profile and resolution is mainly attributed to evanescent waves amplifying from the bottom silver layer and scattering loss reduction with smooth silver films in plasmonic cavity lens. Further, theoretical near-field exposure model is utilized to evaluate aspect profile with plasmonic cavity lens and well illustrates the experimental results. (C) 2015 AIP Publishing LLC. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000351069900055 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6894]  |
| 专题 | 光电技术研究所_微细加工光学技术国家重点实验室（开放室） |
| 作者单位 | 1.[Gao, Ping 2.Yao, Na 3.Wang, Changtao 4.Zhao, Zeyu 5.Luo, Yunfei 6.Wang, Yanqin 7.Gao, Guohan 8.Liu, Kaipeng 9.Zhao, Chengwei 10.Luo, Xiangang] Chinese Acad Sci, State Key Lab Opt Technol Nanofabricat & Microeng, Chengdu 610209, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Ping,Yao, Na,Wang, Changtao,et al. Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens[J]. APPLIED PHYSICS LETTERS,2015,106(9):93110. |
| APA | Gao, Ping.,Yao, Na.,Wang, Changtao.,Zhao, Zeyu.,Luo, Yunfei.,...&Luo, Xiangang.(2015).Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens.APPLIED PHYSICS LETTERS,106(9),93110. |
| MLA | Gao, Ping,et al."Enhancing aspect profile of half-pitch 32 nm and 22 nm lithography with plasmonic cavity lens".APPLIED PHYSICS LETTERS 106.9(2015):93110. |
入库方式： OAI收割
来源：光电技术研究所
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