Moiré-based absolute interferometry with large measurement range in wafer-mask alignment
文献类型：期刊论文
| 作者 | Di, Chengliang1,2; Yan, Wei2; Hu, Song2; Yin, Didi1,3; Ma, Chifei1,2 |
| 刊名 | IEEE Photonics Technology Letters
 |
| 出版日期 | 2015 |
| 卷号 | 27期号:4页码:435-438 |
| ISSN号 | 1041-1135 |
| 通讯作者 | Yan, Wei |
| 中文摘要 | The moiré-based interferometry is demonstrated to significantly improve the measurement range in wafer-mask alignment by adopting two specifically designed four-quadrant grating marks. These relationships between the measurement range, the moiré periods and the accuracy of the moiré-based detection algorithm are deduced. By demodulating the transverse shifts of the moiré fringes with two kinds of periods, the final misalignment can be accurately determined. An experimental setup of the wafer-mask alignment is constructed to explore the feasibility and effectiveness of proposed approach. Results indicate that with the established configurations, the measurement range can be readily extended to 120 μm, which is dozens of times larger than conventional methods, and meanwhile the detection accuracy retains to be at nanometers level. © 2014 IEEE. |
| 英文摘要 | The moiré-based interferometry is demonstrated to significantly improve the measurement range in wafer-mask alignment by adopting two specifically designed four-quadrant grating marks. These relationships between the measurement range, the moiré periods and the accuracy of the moiré-based detection algorithm are deduced. By demodulating the transverse shifts of the moiré fringes with two kinds of periods, the final misalignment can be accurately determined. An experimental setup of the wafer-mask alignment is constructed to explore the feasibility and effectiveness of proposed approach. Results indicate that with the established configurations, the measurement range can be readily extended to 120 μm, which is dozens of times larger than conventional methods, and meanwhile the detection accuracy retains to be at nanometers level. © 2014 IEEE. |
| 学科主题 | Alignment - Lithography - Rapid thermal annealing |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000349111700012 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6897]  |
| 专题 | 光电技术研究所_微细加工光学技术国家重点实验室（开放室） |
| 作者单位 | 1.University of Chinese Academy of Sciences, Beijing, China 2.State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu, China 3.Key Laboratory of Beam Control, Chinese Academy of Sciences, Chengdu, China |
| 推荐引用方式 GB/T 7714 | Di, Chengliang,Yan, Wei,Hu, Song,et al. Moiré-based absolute interferometry with large measurement range in wafer-mask alignment[J]. IEEE Photonics Technology Letters,2015,27(4):435-438. |
| APA | Di, Chengliang,Yan, Wei,Hu, Song,Yin, Didi,&Ma, Chifei.(2015).Moiré-based absolute interferometry with large measurement range in wafer-mask alignment.IEEE Photonics Technology Letters,27(4),435-438. |
| MLA | Di, Chengliang,et al."Moiré-based absolute interferometry with large measurement range in wafer-mask alignment".IEEE Photonics Technology Letters 27.4(2015):435-438. |
入库方式： OAI收割
来源：光电技术研究所
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