Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix
文献类型：期刊论文
| 作者 | Zhou, Guangdong1,2; Wu, Bo3; Liu, Xiaoqin1; Li, Ping3; Zhang, Shuangju1; Sun, Bai1; Zhou, Ankun4 |
| 刊名 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
 |
| 出版日期 | 2016-03-07 |
| 卷号 | 18期号:9页码:6509-6514 |
| 英文摘要 | A two-bit memory and quantized storage phenomenon are observed at room temperature for a device based on the traditional MOS structure with double-stacked Pt-nanocrystals (Pt-NCs). A 2.68 and 1.72 V flat band voltage shift (memory window) has been obtained when applying a +/- 7 V programming/erasing voltage to the structures with double-stacked Pt-NCs. The memory windows of 2.40 and 1.44 V can be retained after stress for 10(5) seconds, which correspond to 89.55% and 83.72% stored charges reserved. The quantized charge storage phenomenon characterized by current-voltage (J-V) hysteresis curves was detected at room temperature. The shrinkage of the memory window results from the decreasing tunneling probability, which strongly depends on the number of stacks. The traps, de-traps and quantum confinement effects of Pt-NCs may contribute to the improvement of dielectric characteristics and the two-bit memory behavior. The multi-bit memory and quantized storage behavior observed in the Pt-NCs stacks structure at room temperature might provide a feasible method for realizing the multi-bit storage in non-volatile flash memory devices. |
| 类目[WOS] | Chemistry, Physical ; Physics, Atomic, Molecular & Chemical |
| 研究领域[WOS] | Chemistry ; Physics |
| 关键词[WOS] | LITHIUM STORAGE ; CHARGE-STORAGE ; FLOATING-GATE ; ZRO2 FILMS ; NANOPARTICLES ; DEVICES ; SILICON ; NANOCRYSTALS ; PERFORMANCE ; DIELECTRICS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000371139400016 |
| 源URL | [http://ir.kib.ac.cn/handle/151853/25988]  |
| 专题 | 昆明植物研究所_植物化学与西部植物资源持续利用国家重点实验室 |
| 作者单位 | 1.Southwest Univ, ICEAM, Chongqing 400715, Peoples R China 2.Guizhou Inst Technol, Guiyang 550003, Peoples R China 3.Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China 4.Chinese Acad Sci, KunMing Inst Bot, Kunming 650201, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Guangdong,Wu, Bo,Liu, Xiaoqin,et al. Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18(9):6509-6514. |
| APA | Zhou, Guangdong.,Wu, Bo.,Liu, Xiaoqin.,Li, Ping.,Zhang, Shuangju.,...&Zhou, Ankun.(2016).Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18(9),6509-6514. |
| MLA | Zhou, Guangdong,et al."Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18.9(2016):6509-6514. |
入库方式： OAI收割
来源：昆明植物研究所
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