International Round-Robin Study of the Thermoelectric Transport Properties of an n-Type Half-Heusler Compound from 300 K to 773 K
文献类型:期刊论文
作者 | 99; Bo SQ(柏胜强); Chen LD(陈立东); 99; 99; 99 |
刊名 | JOURNAL OF ELECTRONIC MATERIALS
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出版日期 | 2015-11-15 |
卷号 | 44期号:11页码:4482 |
语种 | 英语 |
WOS记录号 | WOS:000361903000052 |
源URL | [http://ir.sic.ac.cn/handle/331005/8542] ![]() |
专题 | 上海硅酸盐研究所_能量转换材料重点实验室_期刊论文 |
推荐引用方式 GB/T 7714 | 99,Bo SQ,Chen LD,et al. International Round-Robin Study of the Thermoelectric Transport Properties of an n-Type Half-Heusler Compound from 300 K to 773 K[J]. JOURNAL OF ELECTRONIC MATERIALS,2015,44(11):4482. |
APA | 99,Bo SQ,Chen LD,99,99,&99.(2015).International Round-Robin Study of the Thermoelectric Transport Properties of an n-Type Half-Heusler Compound from 300 K to 773 K.JOURNAL OF ELECTRONIC MATERIALS,44(11),4482. |
MLA | 99,et al."International Round-Robin Study of the Thermoelectric Transport Properties of an n-Type Half-Heusler Compound from 300 K to 773 K".JOURNAL OF ELECTRONIC MATERIALS 44.11(2015):4482. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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