中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide

文献类型:期刊论文

作者Guo HJ(郭慧君); Huang W(黄维); Liu X(刘熙); Yang JH(杨建华); Shi EW(施尔畏); Gao P(高攀); Zhuo SY(卓世异); Xin J(忻隽); Yan CF(严成锋); Liu XC(刘学超)
刊名Computational Materials Science
出版日期2015-01-09
期号100页码:159
WOS记录号WOS:000350366000008
源URL[http://ir.sic.ac.cn/handle/331005/8748]  
专题上海硅酸盐研究所_中试基地_期刊论文
推荐引用方式
GB/T 7714
Guo HJ,Huang W,Liu X,et al. A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide[J]. Computational Materials Science,2015(100):159.
APA 郭慧君.,黄维.,刘熙.,杨建华.,施尔畏.,...&郑燕青.(2015).A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide.Computational Materials Science(100),159.
MLA 郭慧君,et al."A competitive lattice model Monte Carlo method for simulation competitive growth of different polytypes in close-packed crystals: 4H and 6H silicon carbide".Computational Materials Science .100(2015):159.

入库方式: OAI收割

来源:上海硅酸盐研究所

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