Development of broadband X-ray interference lithography large area exposure system
文献类型：期刊论文
| 作者 | Xue, CF; Wu, YQ; Zhu, FY; Yang, SM; Liu, HG; Zhao, J; Wang, LS; Tai, RZ |
| 刊名 | REVIEW OF SCIENTIFIC INSTRUMENTS
 |
| 出版日期 | 2016 |
| 卷号 | 87期号:4页码:— |
| 关键词 | INTERFEROMETRIC LITHOGRAPHY HIGH-RESOLUTION FABRICATION ARRAYS GRIDS LIGHT |
| ISSN号 | 0034-6748 |
| 通讯作者 | Wu, YQ ; Zhao, J ; Tai, RZ (reprint author), Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China. |
| 英文摘要 | The single-exposure patterned area is about several 10(2) x 10(2) mu m(2) which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several square centimeters and even bigger by this technology. Published by AIP Publishing. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000375842500023 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/25683]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Xue, CF,Wu, YQ,Zhu, FY,et al. Development of broadband X-ray interference lithography large area exposure system[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2016,87(4):—. |
| APA | Xue, CF.,Wu, YQ.,Zhu, FY.,Yang, SM.,Liu, HG.,...&Tai, RZ.(2016).Development of broadband X-ray interference lithography large area exposure system.REVIEW OF SCIENTIFIC INSTRUMENTS,87(4),—. |
| MLA | Xue, CF,et al."Development of broadband X-ray interference lithography large area exposure system".REVIEW OF SCIENTIFIC INSTRUMENTS 87.4(2016):—. |
入库方式： OAI收割
来源：上海应用物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。