Topological insulator state in gated bilayer silicene
文献类型：期刊论文
| 作者 | Zhang, MM; Xu, L; Zhang, J |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2015 |
| 卷号 | 27期号:44页码:445301 |
| 关键词 | bilayer silicene strong topological insulator Rashba spin-orbit coupling |
| 通讯作者 | Zhang, MM (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China. |
| 英文摘要 | We investigate the topological insulator state of gated bilayer silicene in the presence of extrinsic Rashba spin-orbit (SO) coupling. The system exhibits a band insulator (BI) phase for small Rashba SO coupling, and then translate to a strong topological insulator (TI) phase with both spin and valley filtered at large Rashba SO coupling. The strong TI phase is robust in the presence of intrinsic SO and intrinsic Rashba SO couplings. When a titled electric field is introduced, the in-plane component of the electric field gives rise to an interlayer Rashba SO coupling, and the system turns to a BI phase no matter how large the Rashab SO coupling and bias voltage are. This will provide potential application in nanoelectronics based on silicene. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Condensed Matter |
| 关键词[WOS] | BERRY PHASE ; TEMPERATURE |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.itp.ac.cn/handle/311006/20793]  |
| 专题 | 理论物理研究所_理论物理所1978-2010年知识产出 |
| 推荐引用方式 GB/T 7714 | Zhang, MM,Xu, L,Zhang, J. Topological insulator state in gated bilayer silicene[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2015,27(44):445301. |
| APA | Zhang, MM,Xu, L,&Zhang, J.(2015).Topological insulator state in gated bilayer silicene.JOURNAL OF PHYSICS-CONDENSED MATTER,27(44),445301. |
| MLA | Zhang, MM,et al."Topological insulator state in gated bilayer silicene".JOURNAL OF PHYSICS-CONDENSED MATTER 27.44(2015):445301. |
入库方式： OAI收割
来源：理论物理研究所
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