中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Quantized transport of interface and edge states in bent graphene

文献类型:期刊论文

作者Li, CC; Xu, L; Zhang, J
刊名SOLID STATE COMMUNICATIONS
出版日期2015
卷号207期号:0页码:30-34
关键词Bent graphene Interface state Quantum Hall effect
通讯作者Zhang, J (reprint author), Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China.
英文摘要We explore the transport behavior of interface and edge states in bent graphene under a magnetic field. The bending angle can change the distribution of interface and edge states, resulting in an interesting evolution of quantized conductance. The interface state vanishes when the bending angle is not less than pi/2, whereas the edge state remains. In the presence of Zeeman splitting, the transport properties are also considered and a quantum spin Hall effect is found. These results may provide a way to control the interlace Current. (C) 2015 Published by Elsevier Ltd.
学科主题Physics
类目[WOS]Physics, Condensed Matter
关键词[WOS]HGTE QUANTUM-WELLS ; ELECTRONIC TRANSPORT ; CARBON NANOTUBES ; SPIN
收录类别SCI
语种英语
源URL[http://ir.itp.ac.cn/handle/311006/21043]  
专题理论物理研究所_理论物理所1978-2010年知识产出
推荐引用方式
GB/T 7714
Li, CC,Xu, L,Zhang, J. Quantized transport of interface and edge states in bent graphene[J]. SOLID STATE COMMUNICATIONS,2015,207(0):30-34.
APA Li, CC,Xu, L,&Zhang, J.(2015).Quantized transport of interface and edge states in bent graphene.SOLID STATE COMMUNICATIONS,207(0),30-34.
MLA Li, CC,et al."Quantized transport of interface and edge states in bent graphene".SOLID STATE COMMUNICATIONS 207.0(2015):30-34.

入库方式: OAI收割

来源:理论物理研究所

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