p-type doping of MgZnO films and their applications in optoelectronic devices
文献类型：期刊论文
| 作者 | Shan, C. X.; J. S. Liu; Y. J. Lu; B. H. Li; F. C. C. Ling and D. Z. Shen |
| 刊名 | Optics Letters
 |
| 出版日期 | 2015 |
| 卷号 | 40期号:13页码:3041-3044 |
| 英文摘要 | A lithium and nitrogen codoping method has been employed to prepare p-type MgZnO films, and p-MgZnO/i-ZnO/n-ZnO structured light-emitting devices (LEDs) and photodetectors have been fabricated. The LEDs can work continuously for about 97 h under the injection of a 20 mA continuous current, which is the best value ever reported for ZnO-based LEDs. The performance of the photodetectors degrades little after several running cycles. The above results reveal the applicability of the p-MgZnO films in optoelectronic devices. (C) 2015 Optical Society of America |
| 收录类别 | SCI ; EI |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/55380]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Shan, C. X.,J. S. Liu,Y. J. Lu,et al. p-type doping of MgZnO films and their applications in optoelectronic devices[J]. Optics Letters,2015,40(13):3041-3044. |
| APA | Shan, C. X.,J. S. Liu,Y. J. Lu,B. H. Li,&F. C. C. Ling and D. Z. Shen.(2015).p-type doping of MgZnO films and their applications in optoelectronic devices.Optics Letters,40(13),3041-3044. |
| MLA | Shan, C. X.,et al."p-type doping of MgZnO films and their applications in optoelectronic devices".Optics Letters 40.13(2015):3041-3044. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。