Optimized growth of graphene on SiC: from the dynamic flip mechanism
文献类型：期刊论文
| 作者 | Wang, D. D.; L. Liu; W. Chen; X. B. Chen; H. Huang; J. He; Y. P. Feng; A. T. S. Wee and D. Z. Shen |
| 刊名 | Nanoscale
 |
| 出版日期 | 2015 |
| 卷号 | 7期号:10页码:4522-4528 |
| 英文摘要 | Thermal decomposition of single-crystal SiC is one of the popular methods for growing graphene. However, the mechanism of graphene formation on the SiC surface is poorly understood, and the application of this method is also hampered by its high growth temperature. In this study, based on the ab initio calculations, we propose a vacancy assisted Si-C bond flipping model for the dynamic process of graphene growth on SiC. The fact that the critical stages during growth take place at different energy costs allows us to propose an energetic-beam controlled growth method that not only significantly lowers the growth temperature but also makes it possible to grow high-quality graphene with the desired size and patterns directly on the SiC substrate. |
| 收录类别 | SCI ; EI |
| 源URL | [http://ir.ciomp.ac.cn/handle/181722/55463]  |
| 专题 | 长春光学精密机械与物理研究所_中科院长春光机所知识产出 |
| 推荐引用方式 GB/T 7714 | Wang, D. D.,L. Liu,W. Chen,et al. Optimized growth of graphene on SiC: from the dynamic flip mechanism[J]. Nanoscale,2015,7(10):4522-4528. |
| APA | Wang, D. D..,L. Liu.,W. Chen.,X. B. Chen.,H. Huang.,...&A. T. S. Wee and D. Z. Shen.(2015).Optimized growth of graphene on SiC: from the dynamic flip mechanism.Nanoscale,7(10),4522-4528. |
| MLA | Wang, D. D.,et al."Optimized growth of graphene on SiC: from the dynamic flip mechanism".Nanoscale 7.10(2015):4522-4528. |
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