中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film

文献类型:会议论文

作者Pu, M.B.; Hu, C.G.; Huang, C.; Wang, M.; Miao, Z.L.; Ma, X.L.; Wu, X.Y.; Luo, X.G.
出版日期2012
会议名称2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
会议日期2012
卷号5
页码1859-1861
通讯作者Pu, M.B.
中文摘要We demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20dB attenuation bandwidth of this structure is larger than 94%, while 40dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate. © 2012 IEEE.
英文摘要We demonstrated numerically a multilayered broadband nearly perfect absorber in terahertz frequencies. The structure is composed of multilayered doped silicon film. Transfer matrix method and genetic algorithm are utilized to simulate and optimize the absorption property. The 20dB attenuation bandwidth of this structure is larger than 94%, while 40dB attenuation bandwidth is also larger than 50%. Compared with previous multilayered absorbers based on resistive metal, the structure proposed here shows better performance and is easier to fabricate. © 2012 IEEE.
收录类别EI
语种英语
源URL[http://ir.ioe.ac.cn/handle/181551/7887]  
专题光电技术研究所_微细加工光学技术国家重点实验室(开放室)
作者单位State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China
推荐引用方式
GB/T 7714
Pu, M.B.,Hu, C.G.,Huang, C.,et al. Optimization of extremely broadband terahertz absorber based on multilayered doped silicon film[C]. 见:2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings. 2012.

入库方式: OAI收割

来源:光电技术研究所

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