中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod

文献类型:期刊论文

作者Wang, H; Zhang, W; Wang, CB; Ma, JW; Huai, P
刊名MATERIALS RESEARCH EXPRESS
出版日期2016
卷号3期号:3页码:
关键词POLYCRYSTALLINE GRAPHENE FUEL-PARTICLES NANOWIRES CONDUCTIVITY RESISTANCE EBSD
ISSN号2053-1591
通讯作者Huai, P (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
英文摘要The thermal transport behaviors of < 011 > Sigma 3, Sigma 9 and Sigma 11 grain boundaries (GBs) in silicon carbide nanorod are investigated by using nonequilibrium molecular dynamics (NEMD) simulation. Temperature changes suddenly at the boundaries if a constant heat flux is assumed. The thermal conductance of these GBs is found several times larger than that of interfaces of other materials previously reported. Furthermore the interfacial thermal resistance increases with elevated temperature above 500 K. Our results give theoretical guidance to understand the underlying thermal transport mechanism in silicon carbide, and may be helpful to design silicon carbide materials for high temperature applications.
收录类别SCI
语种英语
WOS记录号WOS:000377811100019
源URL[http://ir.sinap.ac.cn/handle/331007/25775]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式
GB/T 7714
Wang, H,Zhang, W,Wang, CB,et al. Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod[J]. MATERIALS RESEARCH EXPRESS,2016,3(3):—.
APA Wang, H,Zhang, W,Wang, CB,Ma, JW,&Huai, P.(2016).Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod.MATERIALS RESEARCH EXPRESS,3(3),—.
MLA Wang, H,et al."Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod".MATERIALS RESEARCH EXPRESS 3.3(2016):—.

入库方式: OAI收割

来源:上海应用物理研究所

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