Saturation of ion irradiation effects in MAX phase Cr2AlC
文献类型：期刊论文
| 作者 | Huang, Q; Han, H; Liu, RD; Lei, GH; Yan, L; Zhou, J; Huang, Q |
| 刊名 | ACTA MATERIALIA
 |
| 出版日期 | 2016 |
| 卷号 | 110期号:-页码:1—7 |
| 关键词 | M(N+1)AX(N) PHASES TI3ALC2 TI3SIC2 DAMAGE RESISTANCE TOLERANCE |
| ISSN号 | 1359-6454 |
| 通讯作者 | Yan, L (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China. |
| 英文摘要 | Cr2AlC materials were irradiated with 7 MeV Xe26+ ions and 500 keV He2+ ions at room temperature. A structural transition with an increased c lattice parameter and a decreased a lattice parameter occurs after irradiation to doses above 1 dpa. Nevertheless, the modified structure is stable up to the dose of 5.2 dpa without obvious lattice disorder. The three samples irradiated to doses above 1 dpa have comparable lattice parameters, hardness and modulus values, suggesting a saturation of irradiation effects in Cr2AlC. The structural transition and irradiation effects saturation are ascribed to irradiation-induced antisite defects (Cr-Al and Al-Cr) and C interstitials, which is supported by the calculations of the formation energies of various defects in Cr2AlC. The irradiation-induced antisite defects and C interstitials may be critical to understand the excellent resistance to irradiation-induced amorphization of MAX phases. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000374810400001 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/25828]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Huang, Q,Han, H,Liu, RD,et al. Saturation of ion irradiation effects in MAX phase Cr2AlC[J]. ACTA MATERIALIA,2016,110(-):1—7. |
| APA | Huang, Q.,Han, H.,Liu, RD.,Lei, GH.,Yan, L.,...&Huang, Q.(2016).Saturation of ion irradiation effects in MAX phase Cr2AlC.ACTA MATERIALIA,110(-),1—7. |
| MLA | Huang, Q,et al."Saturation of ion irradiation effects in MAX phase Cr2AlC".ACTA MATERIALIA 110.-(2016):1—7. |
入库方式： OAI收割
来源：上海应用物理研究所
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