Resistive Memory Memory Materials Based on Transition-Metal Complexes
文献类型：期刊论文
| 作者 | Cui Bin-Bin1,2; Tang Jian-Hong1,2; Zhong Yu-Wu1,2 |
| 刊名 | ACTA CHIMICA SINICA
 |
| 出版日期 | 2016-09-15 |
| 卷号 | 74期号:9页码:726-733 |
| 关键词 | resistive memory information storage transition-metal complexes optoelectronic devices optoelectronic materials |
| 英文摘要 | A resistive memory operates as an electrical switch between high and low conductivity states (or multistates) in response to an external electric field. Due to the high capacity, high flexibility, good scalability, low cost, and low power consumption, resistive memory is promising for the next-generation high-density data storage. In addition to inorganic metal oxides, carbon nanomaterials, organic small molecular and polymeric semiconductor materials, transition-metal complexes have recently received much attention as active materials for resistive memory. In this contribution, the applications of transition-metal complexes in resistive memory reported to date are summarized and discussed, mainly including group VIII [Fe(II), Ru(II), Co(III), Rh(III), Ir(III), and Pt(II) complexes], group IB and IIB [Cu(II), Au(III), and Zn(II) complexes], and lanthanide complexes [mainly Eu(III) complexes]. The memory behavior and mechanism of these materials will be discussed. Transition-metal complexes often possess well-defined and reversible redox processes. The frontier energy levels and gaps can be easily modulated by changing the structures of ligands and metal species, which is beneficial for generating electrical bistates or multistate's when they are used in resistive memory devices. These features make transition-metal complexes potentially useful as memory materials in practical applications. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/35159]  |
| 专题 | 化学研究所_光化学实验室 |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, CAS Key Lab Photochem, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Coll Chem & Chem Engn, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cui Bin-Bin,Tang Jian-Hong,Zhong Yu-Wu. Resistive Memory Memory Materials Based on Transition-Metal Complexes[J]. ACTA CHIMICA SINICA,2016,74(9):726-733. |
| APA | Cui Bin-Bin,Tang Jian-Hong,&Zhong Yu-Wu.(2016).Resistive Memory Memory Materials Based on Transition-Metal Complexes.ACTA CHIMICA SINICA,74(9),726-733. |
| MLA | Cui Bin-Bin,et al."Resistive Memory Memory Materials Based on Transition-Metal Complexes".ACTA CHIMICA SINICA 74.9(2016):726-733. |
入库方式： OAI收割
来源：化学研究所
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