中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser

文献类型:期刊论文

作者Dai Shixun; Hu Lili; Liu Zhuping; Huang Guosong; Jiang Zhonghong; Yasukazu Izawa
刊名chin. j. lasers b
出版日期2002
卷号b11期号:2页码:84
英文摘要quasi-cw diode-pumped yb~(3+): borate glass and yb~(3+): phosphate glass microchip lasers have been reported. from yb~(3+): phosphate glass laser, the maximum average output power was 31 mw and the optical-optical conversion efficiency was 5%. the maximum average output power was 18 mw, and optical-optical conversion efficiency was 3% for yb~(3+): borate glass laser.
收录类别EI
语种英语
版本出版稿
源URL[http://ir.siom.ac.cn/handle/181231/17819]  
专题上海光学精密机械研究所_高功率激光单元技术研发中心
推荐引用方式
GB/T 7714
Dai Shixun,Hu Lili,Liu Zhuping,et al. Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser[J]. chin. j. lasers b,2002,b11(2):84.
APA Dai Shixun,Hu Lili,Liu Zhuping,Huang Guosong,Jiang Zhonghong,&Yasukazu Izawa.(2002).Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser.chin. j. lasers b,b11(2),84.
MLA Dai Shixun,et al."Quasi-CW Diode Laser End-pumped Yb~(3+): Glass Microchip Laser".chin. j. lasers b b11.2(2002):84.

入库方式: OAI收割

来源:上海光学精密机械研究所

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