Ion-implanted waveguides in a Nd3+-doped silicate glass
文献类型:期刊论文
作者 | Li SL(李士玲); Chen F(陈峰); Wang XL(王雪林); Fu G(付刚); Wang KM(王克明); Li XS(李锡善); Shen DY(沈定予); Ma HJ(马宏骥); Nie R(聂锐) |
刊名 | chin. phys. lett.
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出版日期 | 2003 |
卷号 | 20期号:11页码:1994 |
通讯作者 | li, sl (reprint author), shandong univ, dept phys, jinan 250100, peoples r china |
英文摘要 | monomode enhanced-index nd3+-doped silicate glass waveguides fabricated by ion implantation are reported. the nd3+-doped silicate glass was implanted by 3.0 mev b+ ions, 3.0 mev o+ ions and 4.5mev ni2+ ions, respectively. a prism-coupling method was carried out to measure dark modes in the nd3+-doped silicate glass using a model 2010 prism coupler. the moving fibre method was applied to measure the waveguide propagation loss. after a moderate annealing, the 3.0-mev b+-ion implanted waveguide loss is about 3.54db/cm,- the 3.0-mev o+-ion implanted waveguide loss is about 5.36 db/cm; and the 4.5-mev the ni2+-implanted waveguide loss is about 7.55 db/cm. the results show that with the increasing ion mass, the loss in implanted waveguide is increased. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000186504900026 |
版本 | 出版稿 |
源URL | [http://ir.siom.ac.cn/handle/181231/18486] ![]() |
专题 | 上海光学精密机械研究所_高功率激光单元技术研发中心 |
作者单位 | 1.Shandong Univ, Dept Phys, Jinan 250100, Peoples R China 2.Peking Univ, Dept Tech Phys, Beijing 100871, Peoples R China 3.Peking Univ, Key Lab Heavy Ion Phys, Minist Educ, Beijing 100871, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 5.Shandong Univ, Sch Chem & Chem Engn, Jinan 250100, Peoples R China 6.Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China |
推荐引用方式 GB/T 7714 | Li SL,Chen F,Wang XL,et al. Ion-implanted waveguides in a Nd3+-doped silicate glass[J]. chin. phys. lett.,2003,20(11):1994. |
APA | 李士玲.,陈峰.,王雪林.,付刚.,王克明.,...&聂锐.(2003).Ion-implanted waveguides in a Nd3+-doped silicate glass.chin. phys. lett.,20(11),1994. |
MLA | 李士玲,et al."Ion-implanted waveguides in a Nd3+-doped silicate glass".chin. phys. lett. 20.11(2003):1994. |
入库方式: OAI收割
来源:上海光学精密机械研究所
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