Chalcogenide phase-change thin films used as grayscale photolithography materials
文献类型：期刊论文
| 作者 | Wang, Rui; Wei, Jingsong; Fan, Yongtao |
| 刊名 | opt. express
 |
| 出版日期 | 2014 |
| 卷号 | 22期号:5页码:4973 |
| 关键词 | GE2SB2TE5 CRYSTALLIZATION STORAGE MEMORY TRANSITIONS FABRICATION DEVICES MEDIA GLASS |
| 通讯作者 | wei, js (reprint author), chinese acad sci, shanghai inst opt & fine mech, shanghai 201800, peoples r china. |
| 英文摘要 | chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. in this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. the grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. in grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. for example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto sb2te3 chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. this work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. the ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks. (c)2014 optical society of america |
| 收录类别 | SCI |
| 语种 | 英语 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/13450]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 作者单位 | 1.[Wang, Rui 2.Wei, Jingsong 3.Fan, Yongtao] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 4.[Wang, Rui] Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Rui,Wei, Jingsong,Fan, Yongtao. Chalcogenide phase-change thin films used as grayscale photolithography materials[J]. opt. express,2014,22(5):4973. |
| APA | Wang, Rui,Wei, Jingsong,&Fan, Yongtao.(2014).Chalcogenide phase-change thin films used as grayscale photolithography materials.opt. express,22(5),4973. |
| MLA | Wang, Rui,et al."Chalcogenide phase-change thin films used as grayscale photolithography materials".opt. express 22.5(2014):4973. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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