Polarity-dependent reversible resistance switching in as-deposited AgInSbTe phase change film
文献类型：期刊论文
| 作者 | Zhai, Fengxiao; Liang, Guangfei; Wang, Yang; Wu, Yiqun |
| 刊名 | physica b
 |
| 出版日期 | 2013 |
| 卷号 | 408页码:12 |
| 通讯作者 | wang, y (reprint author), chinese acad sci, shanghai inst opt & fine mech, key lab mat high power laser, shanghai 201800, peoples r china. |
| 英文摘要 | the electrical properties of a nanoscale prototype capacitor-like cell structure using an amorphous ag8in14sb55te23 (aist) as the active material were investigated. a polarity-dependent reversible switching effect which is different from the amorphous-crystalline phase transformation has been observed. the reversible resistance switching between a high resistance state (hrs) and low resistance state (lrs) was induced by bias amplitude and polarity. the electrical resistance ratio of hrs/lrs was similar to 10:1. the aist phase change material is shown to be very promising for multi-state data storage applications. (c) 2012 elsevier b.v. all rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/15036]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 作者单位 | 1.[Zhai, Fengxiao] Zhengzhou Univ Light Ind, Dept Phys, Zhengzhou 450002, Peoples R China 2.[Liang, Guangfei 3.Wang, Yang 4.Wu, Yiqun] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhai, Fengxiao,Liang, Guangfei,Wang, Yang,et al. Polarity-dependent reversible resistance switching in as-deposited AgInSbTe phase change film[J]. physica b,2013,408:12. |
| APA | Zhai, Fengxiao,Liang, Guangfei,Wang, Yang,&Wu, Yiqun.(2013).Polarity-dependent reversible resistance switching in as-deposited AgInSbTe phase change film.physica b,408,12. |
| MLA | Zhai, Fengxiao,et al."Polarity-dependent reversible resistance switching in as-deposited AgInSbTe phase change film".physica b 408(2013):12. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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