Photoinduced Phenomena in Amorphous Ge-As-S System
文献类型：期刊论文
| 作者 | Liu Qiming; Gu Donghong; Huang Mingju; Gan Fuxi |
| 刊名 | chin. j. lasers b
 |
| 出版日期 | 2002 |
| 卷号 | b11期号:1页码:39 |
| 英文摘要 | x-ray diffraction and reflectivity as well as transmittance on ge-as-s bulk and thin films were performed. it was observed photodarkening in ge-as-s thin films with band gap light illumination from an argon laser of 514.5 nm wavelength and shifting the optical transmittance edge to shorter wavelength, the magnitude of which increases with the increase of the intensity of illumination light. in the ge-as-s bulk, however, it was not observed photodarkening. photodarkening in ge-as-s system was discussed. |
| 收录类别 | EI |
| 语种 | 英语 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/17817]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 推荐引用方式 GB/T 7714 | Liu Qiming,Gu Donghong,Huang Mingju,et al. Photoinduced Phenomena in Amorphous Ge-As-S System[J]. chin. j. lasers b,2002,b11(1):39. |
| APA | Liu Qiming,Gu Donghong,Huang Mingju,&Gan Fuxi.(2002).Photoinduced Phenomena in Amorphous Ge-As-S System.chin. j. lasers b,b11(1),39. |
| MLA | Liu Qiming,et al."Photoinduced Phenomena in Amorphous Ge-As-S System".chin. j. lasers b b11.1(2002):39. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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