Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films Sipeng Gu(顾四朋)（Shanghai Institute of Optics and
文献类型：期刊论文
| 作者 | 顾四朋; 侯立松; 赵启涛; 黄瑞安 |
| 刊名 | Chin. Opt. Lett.
 |
| 出版日期 | 2003 |
| 卷号 | 1期号:12页码:716 |
| 英文摘要 | To improve the optical storage performance, Sn was doped into Ge2Sb2Te5 phase change thin films. The optical and thermal properties of Sn-doped Ge2Sb2Te5 film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge2Sb2Te5 media. |
| 收录类别 | EI |
| 语种 | 英语 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/18382]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 作者单位 | 1.Gu Sipeng, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, ShangHai 201800, China. 2.Hou Lisong, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, ShangHai 201800, China. 3.Zhao Qitao, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, ShangHai 201800, China. 4.Huang Rui'an, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, ShangHai 201800, China. |
| 推荐引用方式 GB/T 7714 | 顾四朋,侯立松,赵启涛,等. Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films Sipeng Gu(顾四朋)（Shanghai Institute of Optics and[J]. Chin. Opt. Lett.,2003,1(12):716. |
| APA | 顾四朋,侯立松,赵启涛,&黄瑞安.(2003).Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films Sipeng Gu(顾四朋)（Shanghai Institute of Optics and.Chin. Opt. Lett.,1(12),716. |
| MLA | 顾四朋,et al."Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films Sipeng Gu(顾四朋)（Shanghai Institute of Optics and".Chin. Opt. Lett. 1.12(2003):716. |
入库方式： OAI收割
来源：上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。