中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
氧杂质及热处理过程对Ge-Sb-Te薄膜的光学性质和晶体结构的影响

文献类型:期刊论文

作者顾四朋; 侯立松; 刘波; 陈静
刊名中国激光
出版日期2003
卷号30期号:12页码:1111
其他题名Optical and Structural Properties of Oxygen-doped and Annealed Ge-Sb-Te Thin Films
中文摘要研究了氧掺杂Ge-Sb-Te磁控溅射相变薄膜在400 ~ 800 nm区域的光学常数(n,k),发现不同氧成分薄膜的光学性质有较大差别,经过热处理后薄膜的光学性质也发生了较大变化。由热处理前后薄膜的X射线衍射(XRD)发现,经过退火处理后薄膜发生了从非晶态到晶态的相变。由薄膜内应力变化和薄膜的结构变化解释了薄膜光学性质的变化。
英文摘要Optical properties of oxygen-doped Ge-Sb-Te thin films prepared by RF-sputtering method in the region of 400^800 nm were studied, including refractive index, extinction coefficient. The results show that optical constants of the Ge-Sb-Te-0 films change with oxygen content and heat-treatment. XRD spectra of the films with different oxygen content in the as-deposited and heat-treated states show that the films changed from amorphous to crystalline states due to heat-treatment. The effect of the strain field induced by oxygen-doping on optical properties is discussed.
收录类别EI
语种中文
版本出版稿
源URL[http://ir.siom.ac.cn/handle/181231/18426]  
专题上海光学精密机械研究所_高密度光存储技术实验室
作者单位1.Gu Sipeng, Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences, Shanghai 201800, China.
2.Hou Lisong, Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences, Shanghai 201800, China.
3.Liu Bo, Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences, Shanghai 201800, China.
4.Chen Jing, National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai 200083, China.
推荐引用方式
GB/T 7714
顾四朋,侯立松,刘波,等. 氧杂质及热处理过程对Ge-Sb-Te薄膜的光学性质和晶体结构的影响[J]. 中国激光,2003,30(12):1111.
APA 顾四朋,侯立松,刘波,&陈静.(2003).氧杂质及热处理过程对Ge-Sb-Te薄膜的光学性质和晶体结构的影响.中国激光,30(12),1111.
MLA 顾四朋,et al."氧杂质及热处理过程对Ge-Sb-Te薄膜的光学性质和晶体结构的影响".中国激光 30.12(2003):1111.

入库方式: OAI收割

来源:上海光学精密机械研究所

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