沉积工艺对二氧化锆薄膜生长特性影响的研究
文献类型：期刊论文
| 作者 | 齐红基; 程传福; 袁景梅; 邵建达; 范正修; 黄立华 |
| 刊名 | 光学学报
 |
| 出版日期 | 2003 |
| 卷号 | 23期号:8页码:974 |
| 其他题名 | Morphology analysis and growth mechanism of zirconium dioxide thin films |
| 中文摘要 | 利用反应离子束溅射、反应磁控溅射和电子束蒸发在K9基底上沉积ZrO-2薄膜，并用原子力显微镜对薄膜表面形貌进行测量。通过数值相关运算，对不同工艺条件下薄膜生长界面进行定量描述，得到了薄膜表面的粗糙度指数、横向相关长度、标准偏差粗糙度等参量。由于沉积条件的不同，薄膜生长具有不同的动力学过程。在反应离子束溅射和反应磁控溅射沉积薄膜过程中，薄膜生长动力学行为均可用Kuramoto-Sivashinsky方程来描述，电子束蒸发制备薄膜的过程可以用Mullins扩散模型来描述，并发现在沉积薄膜过程中基底温度和沉积过 |
| 英文摘要 | ZrO-2 thin films were prepared on BK7 substrates by ion beam reactive sputtering, magnetron reactive sputtering and electron beam evaporation, respectively. The surface morphology was studied using atomic force microscopy (AFM). The roughness exponent a, the lateral correlation length zeta and the interface width w were obtained by numerical correlation calculation, in which the value of roughness exponent of the films was measured to be 0. 61, 0. 81 and 0. 9, respectively. The mechanism of film growth is different under different conditions. In the case of ion beam reactive sputtering and magnetron reactive sputtering, the interfaces of films are determined by stochastic deposition, desorption and diffusion effect of atom or atomic clusters on the interface. The sputtering growth process can be described by a noisy Kuramoto-Sivashinsky equation. But for electron beam evaporation, desorption effect of atom or atomic clusters can be neglected, then the dynamic behavior of growth may be described by Mullins diffusion model. It was also found that the temperature of substrates had great effect on the morphology of grown interface during the deposition of films. |
| 收录类别 | EI |
| 语种 | 中文 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/18236]  |
| 专题 | 上海光学精密机械研究所_光学薄膜技术研究与发展中心 |
| 作者单位 | 1.Qi Hongji, Shanghai institute of Optics and Fine Mechanics,The Chinese Academy of Sciences, Shanghai 201800, China. 2.Chen Chuanfu, Shanghai institute of Optics and Fine Mechanics,The Chinese Academy of Sciences, Shanghai 201800, China. 3.Yuan Jingmei, Shanghai institute of Optics and Fine Mechanics,The Chinese Academy of Sciences, Shanghai 201800, China. 4.Shao Jianda, Shanghai institute of Optics and Fine Mechanics,The Chinese Academy of Sciences, Shanghai 201800, China. 5.Fan Zhengxiu, Shanghai institute of Optics and Fine Mechanics,The Chinese Academy of Sciences, Shanghai 201800, China. 6.Huang Lihua, Laser Technology and Engineering Research Institute,Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. |
| 推荐引用方式 GB/T 7714 | 齐红基,程传福,袁景梅,等. 沉积工艺对二氧化锆薄膜生长特性影响的研究[J]. 光学学报,2003,23(8):974. |
| APA | 齐红基,程传福,袁景梅,邵建达,范正修,&黄立华.(2003).沉积工艺对二氧化锆薄膜生长特性影响的研究.光学学报,23(8),974. |
| MLA | 齐红基,et al."沉积工艺对二氧化锆薄膜生长特性影响的研究".光学学报 23.8(2003):974. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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