Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber
文献类型：期刊论文
| 作者 | Zhang QL(张秋琳); Feng BH(冯宝华); Zhang DX(张东香); Fu PM(傅盘铭); Zhang ZG(张治国); Zhao ZW(赵志伟); Deng PZ(邓佩珍); Xu J(徐军); Xu XD(徐晓东); Wang YG(王勇刚) |
| 刊名 | chin. phys. lett.
 |
| 出版日期 | 2003 |
| 卷号 | 20期号:10页码:1741 |
| 通讯作者 | zhang, ql (reprint author), chinese acad sci, inst phys, lab opt phys, beijing 100080, peoples r china |
| 英文摘要 | a passively q-switched yb: yag microchip laser has been constructed by using a doped gaas as the saturable absorber as well as the output coupler. at 13.5 w of pump power the device produces high-quality 3.4 muj 52 ns pulses at 1030nm with a pulse repetition rate of 7.8khz in a tem00-mode. |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000186039100025 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/18480]  |
| 专题 | 上海光学精密机械研究所_激光与光电子功能材料研发中心 |
| 作者单位 | 1.Chinese Acad Sci, Inst Phys, Lab Opt Phys, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang QL,Feng BH,Zhang DX,et al. Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber[J]. chin. phys. lett.,2003,20(10):1741. |
| APA | 张秋琳.,冯宝华.,张东香.,傅盘铭.,张治国.,...&马晓宇.(2003).Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber.chin. phys. lett.,20(10),1741. |
| MLA | 张秋琳,et al."Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber".chin. phys. lett. 20.10(2003):1741. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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