Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation
文献类型：期刊论文
| 作者 | Zhang GJ ; Gu DH(顾冬红) ; Jiang XW(姜雄伟) ; Chen QX ; Gan FX(干福熹) |
| 刊名 | appl. surf. sci.
 |
| 出版日期 | 2006 |
| 卷号 | 252期号:12页码:4083 |
| ISSN号 | 0169-4332 |
| 关键词 | femtosecond laser amorphous materials scanning electron microscopy atomic force microscopy |
| 中文摘要 | the morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous ge2sb2te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. for the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. the crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mj/cm(2), respectively. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光存储 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000237835100008 |
| 公开日期 | 2009-09-22 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/3805]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 推荐引用方式 GB/T 7714 | Zhang GJ,Gu DH,Jiang XW,et al. Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation[J]. appl. surf. sci.,2006,252(12):4083, 4090. |
| APA | Zhang GJ,顾冬红,姜雄伟,Chen QX,&干福熹.(2006).Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation.appl. surf. sci.,252(12),4083. |
| MLA | Zhang GJ,et al."Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation".appl. surf. sci. 252.12(2006):4083. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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