中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High side-mode suppression ratio laser output by single sideband injection locking of semiconductor lasers

文献类型:会议论文

作者Jian, Wang; Chen, Dijun; Cai, Haiwen; Qu, Ronghui; Fang, Wei; Fang, Zujie
出版日期2014
会议名称conference on semiconductor lasers and applications vi
通讯作者jian, w (reprint author), chinese acad sci, shanghai inst opt & fine mech, shanghai 201800, peoples r china.
英文摘要high side-mode suppression ratio (smsr) and higher optical power output of frequency converted lightwave is successfully realized by single side band injection locking of distributed feedback laser (dfb). this method is of great potential in the application of fast optical frequency sweep signal generation. compared to that acquired from direct carrier suppressed single sideband (cs-ssb), the smsr of the injection locked slave laser by single sideband injection locking is much higher (32.5db to 12db at best), and the power of the injection locked slave laser output is 11db higher (-22dbm to -33.5dbm) than converting directly from cs-ssb. the variation of smsr and locking bandwidth of the slave laser as optical injection ratio changes is also researched.
收录类别CPCI
会议录semiconductor lasers and applications vi
会议录出版者spie-int soc optical engineering
语种英语
源URL[http://ir.siom.ac.cn/handle/181231/17104]  
专题上海光学精密机械研究所_空间激光信息技术研究中心
作者单位1.[Jian, Wang
2.Chen, Dijun
3.Cai, Haiwen
4.Qu, Ronghui
5.Fang, Wei
6.Fang, Zujie] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
推荐引用方式
GB/T 7714
Jian, Wang,Chen, Dijun,Cai, Haiwen,et al. High side-mode suppression ratio laser output by single sideband injection locking of semiconductor lasers[C]. 见:conference on semiconductor lasers and applications vi.

入库方式: OAI收割

来源:上海光学精密机械研究所

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