中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of Surface Morphology on Laser-induced Crystallization of Amorphous Silicon Thin Films

文献类型:会议论文

作者Huang, Lu; Jin, Jing; Wang, Guohua; Shi, Weimin; Yang, Weiguang; Yuan, Zhijun; Cao, Zechun; Zhou, Jun; Lou, Qihong; Liu, Jin
出版日期2013
会议名称8th international conference on thin film physics and applications (tfpa)
通讯作者shi, wm (reprint author), shanghai univ, sch mat sci & engn, 333 nanchen rd, shanghai 200444, peoples r china.
英文摘要the effect of surface morphology on laser-induced crystallization of hydrogenated intrinsic amorphous silicon (a-si:h) thin films deposited by pecvd is studied in this paper. the thin films are irritated by a frequency-doubled (lambda=532 nm) nd:yag pulsed nanosecond laser. an effective melting model is built to identify the variation of melting regime influenced by laser crystallization. based on the experimental results, the established correlation between the grain growth characterized by afm and the crystalline fraction (xc) obtained from raman spectroscopy suggests that the crystallized process form amorphous phase to polycrystalline phase. therefore, the highest crystalline fraction (xc) is obtained by a optimized laser energy density.
收录类别CPCI
会议录eighth international conference on thin film physics and applications
会议录出版者spie-int soc optical engineering
语种英语
源URL[http://ir.siom.ac.cn/handle/181231/17137]  
专题上海光学精密机械研究所_空间激光信息技术研究中心
作者单位1.[Huang, Lu
2.Jin, Jing
3.Wang, Guohua
4.Shi, Weimin
5.Yang, Weiguang
6.Cao, Zechun
7.Liu, Jin
8.Wei, Guangpu] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
推荐引用方式
GB/T 7714
Huang, Lu,Jin, Jing,Wang, Guohua,et al. Effect of Surface Morphology on Laser-induced Crystallization of Amorphous Silicon Thin Films[C]. 见:8th international conference on thin film physics and applications (tfpa).

入库方式: OAI收割

来源:上海光学精密机械研究所

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