Photoinduced effects in amorphous Ge-Se films
文献类型：期刊论文
| 作者 | Liu Qiming ; Zhao Xujian ; Gan FX(干福熹) |
| 刊名 | j. optoelectron. adv. mater.
 |
| 出版日期 | 2006 |
| 卷号 | 8期号:5页码:1838 |
| 关键词 | amorphous GeSe2 films photobleaching photoinduced crystallization |
| ISSN号 | 1454-4164 |
| 中文摘要 | with light illumination from an ar ion laser, the photoinduced changes in vacuum evaporated amorphous gese2 films; were investigated with the x-ray diffraction (xrd), infrared absorption (ir), scanning electron microscope (sem), transmitting electron microscope (tem) and transmittance spectra analysis. it was observed that the optical transmittance edges of films shifted to shorter wavelength according to annealing and light illumination and the shift in well-annealed films could be recovered by annealing at 200 degrees c for 1 h in ar air. the magnitude of shift increased with the increase of the intensity of illumination light and the illumination time. by sides, photoinduced crystallization was also observed in the exposed regions of gese2 films and more of it was observed with stronger intensity of illumination light. |
| 学科主题 | 光存储 |
| 收录类别 | 0 |
| 语种 | 英语 |
| WOS记录号 | WOS:000241473000037 |
| 公开日期 | 2009-09-22 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/3817]  |
| 专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
| 推荐引用方式 GB/T 7714 | Liu Qiming,Zhao Xujian,Gan FX. Photoinduced effects in amorphous Ge-Se films[J]. j. optoelectron. adv. mater.,2006,8(5):1838, 1842. |
| APA | Liu Qiming,Zhao Xujian,&干福熹.(2006).Photoinduced effects in amorphous Ge-Se films.j. optoelectron. adv. mater.,8(5),1838. |
| MLA | Liu Qiming,et al."Photoinduced effects in amorphous Ge-Se films".j. optoelectron. adv. mater. 8.5(2006):1838. |
入库方式： OAI收割
来源：上海光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。