Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics
文献类型：期刊论文
| 作者 | Madeo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J.; Man, Michael K. L.; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M. |
| 刊名 | opt. lett.
 |
| 出版日期 | 2015 |
| 卷号 | 40期号:14页码:3388 |
| 通讯作者 | madeo, j (reprint author), okinawa inst sci & technol grad univ, femtosecond spect unit, onna, okinawa 9040495, japan. |
| 英文摘要 | we report on the first terahertz (thz) emitter based on femtosecond-laser-ablated gallium arsenide (gaas), demonstrating a 65% enhancement in thz emission at high optical power compared to the nonablated device. counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. we understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. our results show that laser ablation allows for efficient and cost-effective optoelectronic thz devices via the manipulation of fundamental properties of materials. (c) 2015 optical society of america |
| 收录类别 | SCI |
| 语种 | 英语 |
| 版本 | 出版稿 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/14125]  |
| 专题 | 上海光学精密机械研究所_强场激光物理国家重点实验室 |
| 作者单位 | 1.[Madeo, Julien 2.Margiolakis, Athanasios 3.Hale, Peter J. 4.Man, Michael K. L. 5.Dani, Keshav M.] Okinawa Inst Sci & Technol Grad Univ, Femtosecond Spect Unit, Onna, Okinawa 9040495, Japan 6.[Margiolakis, Athanasios] Univ Crete, Dept Phys, Iraklion 71003, Greece 7.[Zhao, Zhen-Yu 8.Shi, Wang-Zhou] Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China 9.[Zhao, Quan-Zhong] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 10.[Peng, Wei] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 20信息光学与光电技术实验室_期刊论文, Peoples R China |
| 推荐引用方式 GB/T 7714 | Madeo, Julien,Margiolakis, Athanasios,Zhao, Zhen-Yu,et al. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics[J]. opt. lett.,2015,40(14):3388. |
| APA | Madeo, Julien.,Margiolakis, Athanasios.,Zhao, Zhen-Yu.,Hale, Peter J..,Man, Michael K. L..,...&Dani, Keshav M..(2015).Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.opt. lett.,40(14),3388. |
| MLA | Madeo, Julien,et al."Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics".opt. lett. 40.14(2015):3388. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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