Electronic structure and optical properties of zinc-blende GaN quantum dots
文献类型:期刊论文
作者 | Feng, DH; Jia, TQ; Xu, ZZ |
刊名 | chin. phys.
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出版日期 | 2003 |
卷号 | 12期号:9页码:1016 |
通讯作者 | feng, dh (reprint author), chinese acad sci, shanghai inst opt & fine mech, lab high intens opt, shanghai 201800, peoples r china |
英文摘要 | the energy levels of zinc-blende gan quantum dots (qds) are studied within the framework of the effective-mass envelope-function approximation. the dependence of the energy of electron and hole states on the quantum dot (qd) size is presented. the selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various qd radii are calculated with the wavefunctions of quantized energy levels. the theoretical absorption spectrum of gan qds is in good agreement with the existing experimental result. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000186150600017 |
版本 | 出版稿 |
源URL | [http://ir.siom.ac.cn/handle/181231/18442] ![]() |
专题 | 上海光学精密机械研究所_强场激光物理国家重点实验室 |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Intens Opt, Shanghai 201800, Peoples R China 2.Zhongshan Univ, State Key Lab Opt & Elect Mat & Technol, Guangzhou 510275, Peoples R China |
推荐引用方式 GB/T 7714 | Feng, DH,Jia, TQ,Xu, ZZ. Electronic structure and optical properties of zinc-blende GaN quantum dots[J]. chin. phys.,2003,12(9):1016. |
APA | Feng, DH,Jia, TQ,&Xu, ZZ.(2003).Electronic structure and optical properties of zinc-blende GaN quantum dots.chin. phys.,12(9),1016. |
MLA | Feng, DH,et al."Electronic structure and optical properties of zinc-blende GaN quantum dots".chin. phys. 12.9(2003):1016. |
入库方式: OAI收割
来源:上海光学精密机械研究所
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