中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic structure and optical properties of zinc-blende GaN quantum dots

文献类型:期刊论文

作者Feng, DH; Jia, TQ; Xu, ZZ
刊名chin. phys.
出版日期2003
卷号12期号:9页码:1016
通讯作者feng, dh (reprint author), chinese acad sci, shanghai inst opt & fine mech, lab high intens opt, shanghai 201800, peoples r china
英文摘要the energy levels of zinc-blende gan quantum dots (qds) are studied within the framework of the effective-mass envelope-function approximation. the dependence of the energy of electron and hole states on the quantum dot (qd) size is presented. the selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various qd radii are calculated with the wavefunctions of quantized energy levels. the theoretical absorption spectrum of gan qds is in good agreement with the existing experimental result.
收录类别SCI
语种英语
WOS记录号WOS:000186150600017
版本出版稿
源URL[http://ir.siom.ac.cn/handle/181231/18442]  
专题上海光学精密机械研究所_强场激光物理国家重点实验室
作者单位1.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab High Intens Opt, Shanghai 201800, Peoples R China
2.Zhongshan Univ, State Key Lab Opt & Elect Mat & Technol, Guangzhou 510275, Peoples R China
推荐引用方式
GB/T 7714
Feng, DH,Jia, TQ,Xu, ZZ. Electronic structure and optical properties of zinc-blende GaN quantum dots[J]. chin. phys.,2003,12(9):1016.
APA Feng, DH,Jia, TQ,&Xu, ZZ.(2003).Electronic structure and optical properties of zinc-blende GaN quantum dots.chin. phys.,12(9),1016.
MLA Feng, DH,et al."Electronic structure and optical properties of zinc-blende GaN quantum dots".chin. phys. 12.9(2003):1016.

入库方式: OAI收割

来源:上海光学精密机械研究所

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