Fast rigorous model for mask spectrum simulation and analysis of mask shadowing effects in EUV lithography
文献类型：会议论文
| 作者 | Liu, Xiaolei; Wang, Xiangzhao; Li, Sikun; Yan, Guanyong; Erdmann, Andreas |
| 出版日期 | 2014 |
| 会议名称 | conference on extreme ultraviolet (euv) lithography v |
| 通讯作者 | liu, xl (reprint author), chinese acad sci, lab informat opt & optoelect technol, shanghai inst opt & fine mech siom, shanghai, peoples r china. |
| 英文摘要 | a fast rigorous model is developed for the simulation of mask diffraction spectrum in euv lithography. it combines a modified thin mask model and an equivalent layer method and provides an analytical expression of the diffraction spectrum of mask. based on this model, we propose a theoretical analysis of the mask shadowing effect. mathematical expressions for the best mask (object space) focus position and for the required correction of mask pattern size are derived. when the mask focus is positioned in the equivalent plane of the multilayer, the amount of pattern shift is reduced. when the mask pattern size is corrected using the derived formula, taking a space pattern with the target cd of 22 nm as an example, the imaging cd bias between different oriented features is below 0.3 nm. |
| 收录类别 | CPCI |
| 会议录 | extreme ultraviolet (euv) lithography v
 |
| 会议录出版者 | spie-int soc optical engineering |
| 语种 | 英语 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/17266]  |
| 专题 | 上海光学精密机械研究所_信息光学与光电技术实验室 |
| 作者单位 | 1.[Liu, Xiaolei 2.Wang, Xiangzhao 3.Li, Sikun 4.Yan, Guanyong] Chinese Acad Sci, Lab Informat Opt & Optoelect Technol, Shanghai Inst Opt & Fine Mech SIOM, Shanghai, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Xiaolei,Wang, Xiangzhao,Li, Sikun,et al. Fast rigorous model for mask spectrum simulation and analysis of mask shadowing effects in EUV lithography[C]. 见:conference on extreme ultraviolet (euv) lithography v. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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