非化学计量比氧化物薄膜结构和光存储特性研究
文献类型：学位论文
| 作者 | 李青会 |
| 学位类别 | 博士 |
| 答辩日期 | 2002 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 干福熹 |
| 关键词 | 光存储 TeO<,x>薄膜 Ag-In-Sb-Te-O薄膜 静态存储性能 动态存储性能 |
| 其他题名 | Study on the structural and optical recording properties of the non-stoichiometric oxides thin films |
| 中文摘要 | 光存储技术将成为21世纪信息产业中的支柱技术之一.目前光盘存储技术的主要发展目标有两个,一是提高光盘的存储密度,这可通过采用蓝绿或更短波长和增大物镜的数值孔径等方法来实现;二是提高光盘的数据传输率.在光盘存储技术中,光存储介质的发展是关键和核心.新型光存储技术的发展都伴随着新的存储介质的出现.适应光存储技术发展的要求,寻找适合蓝绿光及更短波长范围应用的光存储介质显得越来越有意义.该文首先较全面的概述了光存储技术和存储材料的研究现状和发展趋势,重点对可擦重写相变光盘存储材料和非化学计量比氧化物光存储材料进行了介绍.在此基础上,对TeO<,x>薄膜以及Ag-In-Sb-Te-O薄膜的结构、光学和蓝绿光短波长光存储特性等方面进行了系统的研究. |
| 英文摘要 | In 21 st century, optical storage technique will become one of the key techniques in information industry. Now, there are mainly two objects for the optical disk storage technique. One is to improve the recording density, and the other is to improve the data transfer rate. As to the optical disk recording technique, the development of recording media is most essential. With the development of optical storage technique, it is very urgent to look for some recording media which are suitable for blue-green short-wavelength optical recording. In the first part of this thesis, the state of research and development trend of the optical storage technique and the recording materials are reviewed. A detailed and comprehensive overview on erasable phase change materials and non-stoichiometric oxides optical recording media is given. Based on the analysis, a systemic study on the structural, optical and short-wavelength optical recording properties of the TeOx and the Ag-In-Sb-Te-0 thin films are reported. Single-layer TeOx thin films were deposited on K.9 glass substrates by vacuum evaporation. It was found that the as-deposited TeOx thin films represented a two-component system comprising tellurium particles dispersed in amorphous TeO2 matrix. The tellurium particles were in crystalline hexagonal state. The TeOx thin films had a fine granular structure and exhibited a rough surface. The optical properties of the TeOx thin films were also studied and it was found the films showed good reflectivity and the absorbance was mainly determined by the dispersed tellurium particles. The optical constants of the film was determined by ellipsometry. The TeOx thin films are suitable for using as the mask film in super-resolution optical disk. In this thesis, the static and the dynamic optical recording performances of the TeOx thin films at short-wavelength (514.5 nm) are first reported. According to the results of static test, the TeOx thin films showed good writing sensitivity and the reflectivity contrast was relatively high at low writing power. The reflectivity contrast could amount to 85% with writing power near 5 mW and writing pulse width 50 ns. The carrier to noise ratio (CNR) of the disk can reach about 30dB at 514.5 nm with writing power 12 mW, writing pulse width 500 ns ,and reach 41dB at 780 nm with writing power 6 mW, writing pulse width 500 ns, as proves the TeOx thin films is a good candidate medium for blue-green short-wavelength high density optical storage. For the first time, atomic force microscopy (AFM) was used to study the microstructure of short-wavelength laser static recorded marks in TeOx thin film without protection layer by adopting a specific locating method. Microarea morphology images show that the marks are deformed, and depressions and bulges have been imaged in the recorded marks. The level of the deformation is enhanced with the increase of writing power. AFM allows a precise determination of the mark size, the depression depth and the bulge height. The present setup allows the identification of individual marks through a specific location method and the correlation of the reflectivity contrast, C, caused by a specific writing power to the morphology of the marks. The results of TEM analysis showed that there was not obvious difference between the phase states of the tellurium particles before and after laser irradiation. The recording mechanism of the TeOx thin films at 514.5 nm is discussed based on the experimental results. Single-layer TeOx:Sb thin films were deposited on K9 glass substrates by vacuum co-evaporation. The structural, optical and the static recording properties of the films were studied. It was found that all these properties were obviously different from those of TeOx films. The TeOx:Sb thin films had good writing sensitivity and certain erasability. Ag-In-Te-Sb-O thin films were deposited by reactive RF-sputtering using Ag-In-Te-Sb alloy target in a mixture of argon-oxygen plasma with different ratio of oxygen to argon. The reflectance spectra and optical constants (n,k) of the films were studied. It was found that films deposited at PO2/PAT of 2-4% had comparatively large reflectivity, after annealing at 300 ℃ under protection of argon for 30 minutes, the reflectivity in the wavelength range of 500-700nm could rise by about 17-25%; Film deposited at PO2/PAT of 2% had large absorption in the wavelength range of 400-650nm, the optical constants also changed much after annealing. The XRD analyses indicated that only Sb crystal formed after annealing, as was different to crystallization characters of Ag-In-Te-Sb films. Components and chemical states of the elements were analyzed by XPS. The static and the dynamic optical recording performances of the Ag-In-Te-Sb-0 thin films at short-wavelength (514.5 nm) are first reported. According to the results of static test, the reflectivity contrast can be as high as 31% after being recorded with writing power 10 mW and writing pulse width 100 ns at Po2/PAr of 2%. The reflectivity contrast between the recorded and the erased state was 6-15% with writing power 10 mW, writing pulse width 200 ns, erasing power 6 mW, erasing pulse width 200-600. The CNR of the erasable phase change optical disk with Ag-In-Te-Sb-0 film as the recording medium could reach about 28 dB at 514.5 nm with writing power 15 mW, writing pulse width 500 ns ,and reach 38dB at 780 nm writing power 13.5 mW, writing pulse width 500 ns. The CNR of the disk decreased to 20 dB after about 1000 direct re-writing. The reasons which caused the low CNR of the disk were discussed. This kind of films had the potential for using as an erasable high-density optical storage medium. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/15361]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 李青会. 非化学计量比氧化物薄膜结构和光存储特性研究[D]. 中国科学院上海光学精密机械研究所. 2002. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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