超快激光控制半导体材料光谱特性研究
文献类型：学位论文
| 作者 | 罗建 |
| 学位类别 | 博士 |
| 答辩日期 | 2009 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 龚尚庆 |
| 关键词 | 超快激光 相干控制 半导体光谱 拉比振荡 脉冲序列 |
| 其他题名 | Study on the Spectral Effects Controlled by the Ultrafast Laser Pulses in Semiconductor |
| 中文摘要 | 超快激光与物质相互作用研究是国际上近年来兴起的激光物理领域的热点方向，量子调控也是当今量子光学和激光物理等学科的交叉前沿研究领域。超快激光与物质相互作用中的量子调控研究可以推动量子光学与激光物理等学科的发展，同时对于如量子信息科学等许多新兴与交叉学科的发展具有重要意义。将超快激光中的量子调控研究应用到半导体及半导体纳米结构不仅有助于理解半导体结构中的量子相干效应，而且为基于半导体微结构中的相干效应的光学器件提供了理论依据。 本论文主要就超快激光与半导体及半导体量子阱结构相互作用的非线性量子调控进行深入研究，并对其可能的应用进行了简单的探讨，取得了具有一定创新性的研究成果。主要包括： 1．研究了超短脉冲激发偏压半导体时，线性啁啾对红外发射谱的影响。结果显示其强度在啁啾率小于阈值（χ=0.015）时，随着啁啾率的增加而增加；当啁啾率大于阈值时，随着啁啾率的增加反而减小；在阈值处的红外谱 强度比χ=-0.025处红外谱强度高出两个数量级。该结果对于技术上控制高强度红外谱的产生提供了可能性。 2．探讨了在考虑激子相互作用引起的局域场校正效应条件下面积2π飞秒脉冲激发块状半导体薄膜的电子空穴密度拉比振荡。研究发现，对于周期量级脉冲而言，会出现两个不完整的拉比反转；对于单周期以及亚周期脉冲而言，由于绝对相位的改变，拉比振荡的幅值会随之改变，甚至可能出现完整的拉比反转。 3．对飞秒脉冲序列激发半导体多量子阱再发射场的相位相干控制进行了研究。发现再发射场的相位演化受入射脉冲序列相继脉冲之间相对相位的控制。对于脉冲序列的所有奇数次脉冲与半导体多量子阱相互作用过程，再发射场与入射场之间的相位关系经历从反相到同相再到反相的变化。而对于脉冲序列的所有偶数次脉冲与半导体多量子阱相互作用过程，情况则相反，即再发射场与入射场之间的相位关系从同相到反相再到同相。相继脉冲之间时间段的再发射场的幅值受入射脉冲序列相继脉冲之间相对相位的控制。 4．研究了周期量级和亚周期脉冲激发半导体单阱子带间跃迁的发射谱，结果发现Fano干涉会引起三次谐波增强， 而不会改变基次谐波。对于低强度亚周期入射脉冲激发，三次谐波由于Fano干涉引起的增强可以达到一个数量级。 |
| 英文摘要 | Study on the interaction of ultrafast laser with matters is a hot topic of laser physics. Quantum coherent control is also a frontier area arisen now. Quantum coherent control on the interaction of ultrafast laser with matters not only propel the development of these subjects but also have significant contributions to the emerge and progress of new subjects such as quantum information, quantum computation and other rising or cross disciplines. There is great interest in extending the quantum coherent control of the ultrafast laser to semiconductor system or semiconductor nano materials, not only for the understanding of the nature of quantum coherence in semiconductors but also for the possible implementation of optical devices based on these coherent properties. In this thesis, we mainly investigate the quantum coherent control of nonlinearity on the interaction of ultrafast laser with semiconductor system and semiconductor quantum wells. The main innovative and important results are: 1．We investigat the effect of linear chirp on the infrared spectra in a biased semiconducting thin film. We found that infrared spectral intensity increases with increasing chirp rate until a threshold value (χ=0.015) is reached and then decreases. The infrared spectral intensity corresponding to the threshold is about two orders of magnitude higher than that of χ=-0.025. These infrared signal features are independent of the amplitude of the incident pulse. Our results may be helpful in technological control of the infrared signal. 2．We study Rabi oscillation of the electron-hole density by taking into account the LFC induced by the interacting excitons in the thin bulk semiconductor GaAs for 2$\pi$ femtosecond pulse excitation. The result showed, for a few-cycle pulse, that there are two incomplete Rabi-floppings. For one-cycle and sub-cycle pulse, because of the absolute phase effects, the magnitude of the Rabi oscillation enhances, and even the complete Rabi-flopping emerges. 3．We explore the coherent control of the phase of reemitted field in the GaAs/AlGaAs QWs under the femtosecond pulse train excitation. The result shows that the phase evolution of the reemitted field is determined by the relative phase between the successive pulses of the incident train. During interaction between all the odd pulses of the incident train and the semiconductor QWs, the reemitted field is from out-of-phase to in-phase, then again to out-of-phase with the incident pulses. However, during interaction between all even pulses of the incident train and the semiconductor QWs, the reemitted field is from in-phase to out-of-phase, then again to in-phase with the incident pulses. The amplitude of the reemitted field between the successive pulses is controlled by the relative phase of the pulses of the incident train. 4．We investigate the emission of the semiconductor single well intersubband under the few-cycle or sub-cycle pulse exciting. We found that the Fano interference may induce third harmonic enhance, whereas not induce the first harmonic change. Furthermore, third harmonic enhancement changes with the magnitude and the duration of the incident pulse. Meanwhile, third harmonic due to the Fano interference may be enhanced about one order of magnitude for the low intensity of the sub-one-cycle incident pulse exciting. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/15378]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 罗建. 超快激光控制半导体材料光谱特性研究[D]. 中国科学院上海光学精密机械研究所. 2009. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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