光学薄膜中的杂质分析和缺陷抑制
文献类型：学位论文
| 作者 | 吴师岗 |
| 学位类别 | 博士 |
| 答辩日期 | 2006 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 邵建达 |
| 关键词 | 杂质 缺陷 光学薄膜 激光损伤阈值 负离子元素 相变 |
| 其他题名 | Analysis of impurities and reducing of defects in optical thin film |
| 中文摘要 | 高功率大能量激光系统的发展需要高质量的光学薄膜，但是薄膜的激光损伤问题是限制薄膜应用的主要障碍。大量的薄膜激光损伤实验表明，薄膜中的杂质和缺陷是导致薄膜激光损伤的重要诱因，减少薄膜中的杂质和缺陷是提高其激光损伤阈值的一个主要途径。通过对薄膜中的杂质元素进行分析，找到薄膜中的最有害杂质元素；从源头上来抑制薄膜中缺陷的产生，制备出低缺陷密度高损伤阈值的薄膜已成为一个重要的研究课题。 在工艺条件和试验设备一定的情况下，认为薄膜中杂质主要来源于镀膜材料。用辉光放电质谱法对HfO2镀膜材料进行分析，并得出了对HfO2薄膜最有害的四种杂质元素，即金属杂质、吸收性介质杂质、Zr元素的含量和负离子杂质元素。通过对锆铪分离过程和HfO2镀膜材料的制备过程的研究，明确了杂质的来源，为消除材料中的杂质指出了方向。提出负离子杂质损毁模型，通过选用三种不同Cl含量的HfO2镀膜材料来制备薄膜，试验结果很好的支持了负离子损毁模型。 薄膜中的杂质和缺陷引入与镀膜工艺参数密切相关。对薄膜工艺过程中预熔工艺、基底清洗、背景气体压强、不同制备方法等工艺参数对杂质和缺陷的影响进行了研究。对颗粒料预熔的规范化进行了初步探讨，提出了分步加电流－多次加料的预熔方法。 对于ZrO2、HfO2等存在多晶转变的高折射率材料，相变是材料产生喷溅的主要原因，且不能通过改善镀膜工艺来消除。利用掺杂相稳定基质相的原理，从源头抑制了缺陷的产生。利用相稳定的原理，制备出了不同Y2O3加入量的Y2O3稳定ZrO2(YSZ)镀膜材料。检测结果显示当Y2O3的摩尔加入量达到7mol%时，材料中ZrO2主要以高温相－立方相存在，达到了材料稳定的要求。优选出Y2O3含量为3mol%，7mol%和13mol%的YSZ镀膜材料制备薄膜，对薄膜进行结构和损伤阈值测试，并与ZrO2薄膜进行比较，结果表明YSZ薄膜的损伤阈值比ZrO2高。选取13mol%的YSZ镀膜材料镀制高反膜，得到了同样的结果。 |
| 英文摘要 | The rapid development of high power and larger aperture laser systems requires high quality optical thin films, however laser damage has hampered the progress of optical coatings badly.A lot of experiment results indicate that impurities and defects are the main causes for the films failure, which means if impurities and defects are decreased, the laser-induced damage threshold (LIDT) of the films will be improved. Therefore, here come important research problems－finding harmful impurity elements by analysis them in optical coating; preparing lower defect density and higher LIDT optical coatings by suppressing defects. Because equipments and preparing techniques can be controlled, we suppose impurities in thin film origin from coating material mostly. Content of impurity elements of HfO2 coating material was detected by Glow Discharge Mass Spectrum (GDMS) Analysis exactly.It was found there were four kinds of impurity elements in HfO2 coatings, which were metal impurities, absorptive dielectric impurities, content of Zr element and negative ion elements impurity. We analysed origin of impurities by researching Zirconium-hafnium separation and HfO2 coating material preparation, which are important for us to eliminate impurities.Negative ion element impurities breakdown model in HfO2 thin film were brought forward,HfO2 thin films were deposited by the electron-beam evaporation method.We can see that experimental results supported negative ion element model well. Impurities and defects in optical coating were related with preparing parameter firmly. In this dissertation, premelting technique, the cleaning technique, back ground gas pressure, different preparation technique, and other parameters are studied.To normalize premelting of particle coating material,many steps electric current-many time adding material premelting way was reported. Phase transition is main reason of ejection for ZrO2、HfO2 high refractive index material,which can not be avoided by preparing technics.Defects were suppressed from origin by addition phase stabilized radix phase. Y2O3 stabilized ZrO2 coating material with different Y2O3 molar content were prepared.Results indicated that ZrO2 is cubic phase (high temperature stabilized phase) with more than 7mol% Y2O3. Four kinds of Y2O3 stabilized ZrO2 (YSZ) thin films with different Y2O3 content have been prepared on BK7 substrates by electron-beam evaporation method.Structural properties and LIDT was determined. It was found that The LIDT of YSZ thin film is higher than that of ZrO2 thin films. We got the same result by measuring the laser induced damage threshold of YSZ/SiO2 and ZrO2/SiO2. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/15487]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 吴师岗. 光学薄膜中的杂质分析和缺陷抑制[D]. 中国科学院上海光学精密机械研究所. 2006. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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