硫系激光热刻蚀薄膜的制备及其性质
文献类型：学位论文
| 作者 | 李豪 |
| 学位类别 | 博士 |
| 答辩日期 | 2012 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 吴谊群 |
| 关键词 | 激光热刻蚀 ZnS-SiO2 AIST 显影 热传导层 |
| 其他题名 | Preparation and properties of chalcogenide thin films for laser thermal lithography |
| 中文摘要 | 激光热刻蚀是一种制备高分辨微纳结构的新技术。本文系统研究了AgInSbTe和ZnS-SiO2薄膜的激光热刻蚀特性，主要研究内容包括：晶化条件对AgInSbTe（以下简称AIST）薄膜物相结构的影响；氢氧化钠（NaOH）和硫化铵（(NH4)2S）溶液浓度、晶化条件以及薄膜组分对AIST薄膜腐蚀选择特性的影响；氢氟酸（HF）和氟化铵（NH4F）浓度比以及热退火温度对ZnS-SiO2薄膜腐蚀选择特性的影响；衬底材料、热传导层薄膜和激光直写条件对制备AIST和ZnS-SiO2激光热刻蚀图形结构形貌和特征尺寸的影响。 在此基础上，采用激光波长为405 nm，数值孔径为0.90的激光直写系统在AIST薄膜上成功制备出了点直径为130 nm和线宽为140 nm的激光热刻蚀结构，突破了使用的激光直写系统的衍射极限275 nm。以具有非线性反饱和吸收特性的有机薄膜作为激光热刻蚀材料ZnS-SiO2的光吸收和热传导层，采用上述激光直写系统在ZnS-SiO2薄膜上成功制备出了最小点直径为145 nm的激光热刻蚀结构。通过设计激光热刻蚀膜层结构，在激光热刻蚀AIST膜层下方插入热扩散系数大于AIST薄膜的热传导层，如Ag或Al，可以改变热量在AIST膜层内的热扩散方向，将AIST激光热刻蚀图形结构的分辨率提高20%以上。 |
| 英文摘要 | Laser thermal lithography is a new technique for high-resolution micro-/nano-structure fabrication. In this dissertation, the laser thermal lithography characteristics of the AIST and ZnS-SiO2 films are investigated systematically. The mainly contents include the following parts: influence of the crystallization conditions on the phase structure of the AIST film; influences of the concentration of the sodium hudroxide (NaOH) and ammonium sulfide ((NH4)2S) solutions, the crystallization conditions and components on the selective etching characteristics of the AgInSbTe（AIST for abbreviation）film; influences of the concentration ratio of the hydrofluoric acid (HF) and ammonium fluoride (NH4F) and the annealing temperature on the selective etching characteristics of the ZnS-SiO2 film; influences of the sunstrate, thermal conduction layer, and laser direct writing conditions on the morphology and characteristic size of the fabricated AIST and ZnS-SiO2 patterns. On this basis, high-resolution AIST pattern is successfully fabricated by using the laser direct writing system with a laser wavelength (λ) of 405 nm and numerical aperture (NA) of 0.90, where the minimum diameter of the AIST dot is 130 nm and the minimum width of the AIST line is 140 nm. This size is far beyond the optical diffraction limit of 275 nm given by our laser direct writing setup, which can be calculated by 0.61λ/NA. By using the organic film with nonlinear reverse satureable absorption property as light absorption and thermal conduction layer, ZnS-SiO2 patterning dot with size of 145 nm is fabricated, which is less than the optical diffraction limit of 275 nm. Through designing the film structure, inserting a thermal conduction layer with a thermal diffusion coefficient larger than that of the AIST film under the AIST layer, such as Ag and Al, can change the heat diffusion direction in the AIST film and make the patterning resolution enhance more than 20% compared with the sample without thermal conduction layer. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/15698]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 李豪. 硫系激光热刻蚀薄膜的制备及其性质[D]. 中国科学院上海光学精密机械研究所. 2012. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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