ITO薄膜的直流磁控溅射工艺研究
文献类型：学位论文
| 作者 | 曾维强 |
| 学位类别 | 硕士 |
| 答辩日期 | 2008 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 贺洪波 |
| 关键词 | 透明导电氧化物 ITO薄膜 直流磁控溅射 透射率 电阻率 |
| 其他题名 | DC-Magnetron Sputtering Process of ITO Thin Films |
| 中文摘要 | 随着显示技术、太阳能电池、光通信技术的进步和产业化，极大地推动了光电薄膜的发展，其中透明导电薄膜是一种非常重要并广泛应用的光电薄膜，现在已大规模地应用于平板显示、太阳能电池、建筑物幕墙玻璃等。 ITO薄膜(Indium Tin Oxide Thin Film)是一种重要的透明导电薄膜，具有体心立方铁锰矿结构，属于重掺杂n型半导体材料，载流子浓度约1020~1021/cm3数量级，最低电阻率达到10-5 ，禁带宽度为3.5~4eV，具有高可见光透射率，中远红外优良反射性能，其出色的导电性和透光性成为光电器件领域非常重要的光学元件。 本论文用直流磁控溅射法制备透明导电ITO薄膜，靶材为ITO陶瓷靶，组分为In2O3＋SnO2 (9:1)，Ar为工作气体，O2为反应气体，研究了衬底温度、氩氧比、溅射气压、退火及不同制备技术对ITO薄膜光学、电学性能和结构的影响。对实验结果的分析表明：工艺条件的变化主要通过影响沉积粒子能量、沉积速率、材料的化学价态和组分配比，实现对ITO薄膜透明导电性能的影响。本论文所用表征手段主要为四探针测试仪、可见-紫外分光光度计、X射线衍射仪、台阶仪等。 通过本论文的工作，扩充了所在研究组在ITO薄膜制备方面的技术手段，积累了较为充分的工艺实验数据，为后续工作奠定了一定的基础。 |
| 英文摘要 | As the rapid developments of panel display, solar cell, and optical communicati- on, the photoelectric thin film develops very fast. Transparent conductive oxide thin film is one of that used widely in liquid crystal display, solar cell, curtain wall of constructions, and so on. Indium tin oxide thin film is a kind of important transparent conductive oxide thin film, as a heavily doped n-type semiconductor with body cubic structure, its density of free electron is about 1020~1021 cm-3. The lowest resistivity of ITO thin film could be 10－5 , and its band gap is 3.5~4eV, while it has high transparen- ce in the visible spectral region and high reflectance in the infrared range. Because of excellent conductivity and high transmittance, ITO thin film gets to be one of the most important photoelectric devices. In this thesis, ITO thin films were prepared by d.c. magnetron sputtering, using an ITO target with a combination of 90wt％ In2O3 and 10wt% SnO2. Ar and O2 were used as working gas and reaction gas, respectively. The influences of substrate temperature, Ar/O2 ratio, sputtering pressure and annealing process on optical, electrical, and structural properties of ITO thin films were investigated. Conclusions could be drawn that the energy of deposited atoms, deposition rate, and material stoichiometry, which were influenced by those deposition parameters, affect all the properties of the thin films. Spectrophotometer, four-point probe meter, and X-ray diffraction were employed in this thesis for sample characterizations. The contribution of this thesis to our research group can be recognized as a practicable technology for ITO thin film preparation. Based on large quantity of experiment data, a good foundation has been established for the future development. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/16381]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 曾维强. ITO薄膜的直流磁控溅射工艺研究[D]. 中国科学院上海光学精密机械研究所. 2008. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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