飞秒激光与透明介质、半导体相互作用中若干问题的理论与实验研究
文献类型：学位论文
| 作者 | 王晓峰 |
| 学位类别 | 硕士 |
| 答辩日期 | 2005 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 贾天卿 |
| 关键词 | 周期量级激光脉冲 电子加热 超快动力学 透明介质 半导体 |
| 其他题名 | Some theoretical and experimental research on the interaction of femtosecond laser and transparent dielectric, semiconductor |
| 中文摘要 | 自从1960年激光器出现以来，激光与透明介质相互作用就是一个倍受关注的研究领域。特别是飞秒超短激光脉冲的出现，极大地促进了激光与透明介质、半导体材料的研究进展。激光在工业、材料科学、医药等领域的应用也越来越广泛。本文主要研究了超短激光脉冲与透明介质、半导体相互作用的两个热点问题：周期量级激光脉冲作用下透明介质中导带电子加热与碰撞电离，以及飞秒激光作用下半导体材料硒化锌（Znse）破坏的超快过程。具体来说包括：l从经典理论出发，通过改进Drude模型研究了周期量级激光脉冲作用下透明介质中导带电子加热，并首次考虑了平面波近似对周期量级激光与透明介质相互作用的影响。结合Flux一Double模型，研究了周期量级激光作用下导带电子的碰撞电离速率，讨论了载波相位对碰撞电离的影响。文章中还讨论了有关超短激光脉冲作用下能量沉积的其它模型。2建立了泵浦一探测实验系统，研究了飞秒激光辐照下Znse晶体烧蚀的超快动力学过程。实验发现了长脉冲情况下不存在的超快融化现象，而没有明显的热效应。飞秒激光在晶体中激发出高密度等离子体，进一步导致了晶格的破坏和材料的烧蚀。另外，材料烧蚀前存在小于1Ps的超快相变过程。随着泵浦光强度的增加，超快相变的时间变短。我们还测得I了15ofs／800nm激光作用下ZnSe的烧蚀阈值约为o．7J／cm2。 |
| 英文摘要 | Since the discovery of laser in 1960, the laser-solid state material interaction has been an attractive researching field. The appearance of femtosecond laser propels the research of laser-dielectnc/semiconductor interaction, and opens up a wide range of new applications in industry, material science, and medicine. Here two important points about femtosecond laser-solid state matenal interaction are concerned: conduction band electron heating (laser energy deposition) in transparent dielectric under few-cycle laser irradiation, and the ultrafast optical breakdown of semiconductor under femtosecond laser irradiation. With the classical theory and a modified Drude model, the conduction electron heating of transparent dielectnc under few-cycle laser irradiation is explored. Considering the plan wave approximation for the first time in the few-cycle laser-transparent dielectric interaction, we achieve a quite different result. With the Flux-Double model, we discuss the impact ionization and the influence of the carrier envelop phase. Other models for laser energy deposition are also concerned later. With a pump-probe technology, the ultrafast dynamic process and laser ablation during femtosecond laser-Zinc Selenide crystal interaction are investigated for the first time. We find an ultrafast melting process, which is absent in long pulse-material interaction. The appearance of high density plasma foretells the ablation of semiconductor. In the experiment, We observed the structural transition process with time scale less than 1 ps. With the excitation fluence increasing, the time for the structural transition becomes shorter. Furthermore, the 150 fs/ 800 nm laser ablation threshold fluence is determined as 0.7 J/cm2. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/16506]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 王晓峰. 飞秒激光与透明介质、半导体相互作用中若干问题的理论与实验研究[D]. 中国科学院上海光学精密机械研究所. 2005. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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