γ-LiAlO2上非极性宽禁带半导体薄膜制备及其光谱特性研究
文献类型：学位论文
| 作者 | 周健华 |
| 学位类别 | 硕士 |
| 答辩日期 | 2007 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 周圣明 |
| 关键词 | GaN ZnO γ-LiAlO2 偏振透射谱 拉曼光谱 |
| 其他题名 | Nonpolar wide band gap semiconductor film growth on γ-LiAlO2 and their photo-properties |
| 中文摘要 | GaN和ZnO半导体材料因其在固态照明中的潜在应用而备受关注。目前基于GaN的发光二极管(LED)已经商业化，而日本科学家已经成功制作了ZnO的同质pn结。但是目前的GaN、ZnO基发光器件基本上都是以c面蓝宝石为衬底的，薄膜取向是[0001]方向。这样的发光器件受到所谓的量子限制斯塔克效应(QCSE)的影响，辐射复合效率较低，发光光谱不稳定。为了克服这个缺点而考虑生长非极性的GaN、ZnO薄膜，所用的衬底主要包括r面蓝宝石和γ-LiAlO2。本文主要是研究在γ-LiAlO2上生长的非极性GaN、ZnO薄膜的光学性质。 1. 利用提拉法生长了高质量的γ-LiAlO2晶体，然后用Rietveld方法对晶体结构作了精修，获得了晶体的晶格常数和热膨胀系数。根据这些参数，分析了γ-LiAlO2作为非极性GaN、ZnO薄膜衬底的可行性。 2. 利用金属有机物化学气相淀积(MOCVD)法，在γ-LiAlO2 (100)面和(302)面上分别生长了m面GaN和a面GaN薄膜，XRD结果证实薄膜是非极性取向的；利用激光脉冲沉积(PLD)方法，在γ-LiAlO2 (302)面上生长了a面ZnO薄膜，并且用XRD、原子力显微镜(AFM)、真空紫外谱(VUV)、光致发光谱(PL)等对薄膜做了结构和性能的表征。 3. 利用偏振透射谱和偏振拉曼谱分别研究了非极性GaN、ZnO薄膜的各向异性光学性质。GaN薄膜受到应力影响价带结构发生对称性的改变，偏振透射光谱反映了这一点。而对于ZnO，偏振透射谱更多的是反映了本征的能带结构。而它们的偏振拉曼谱都展现了它们作为非极性薄膜的各向异性性质。 |
| 英文摘要 | GaN and ZnO received more and more attention because of their potential application in Solid State Lighting(SSL). Despite commercialized GaN-based light emitting diodes(LEDs) and ZnO pn junction, GaN(ZnO)-based light emitters with c-plane sapphire as their substrate suffered from Quantum Confined Stark Effect(QCSE) with a decreased radiative recombination efficiency and an unstable emission spectrum. In order to overcome QCSE, nonpolar GaN(ZnO) films were suggested with r-plane sapphire or γ-LiAlO2 as their substrates. And this paper focuses on the photo-properties of nonpolar GaN, ZnO films onγ-LiAlO2. 1. Large-sized LAO crystal with a high quality has been grown by Czochralski technique. Precise lattice constants, thermal expansion coefficients and other structure parameters of γ-LiAlO2 were refined, based on Rietveld analysis. And according to these parameters, we point out the possibility of γ-LiAlO2 to be used as substrate for nonpolar GaN and ZnO films. 2. M-plane and a-plane GaN films were deposited on (100)plane and (302)plane of γ-LiAlO2 by Metal Organic Chemical Vapor Deposition (MOCVD), respectively, which was proved by X-ray diffraction(XRD). A-plane ZnO film was deposited on (302)plane of γ-LiAlO2 by Pulsed Laser Deposition(PLD), which was characterized by XRD, Atomic Force Microscope (AFM), Vacuum Ultraviolet spectrum(VUV) and photo-luminescence (PL). 3. We observed in-plane anisotropy in polarized transmission spectrum and Raman spectrum for our nonpolar GaN and ZnO films. For stressed GaN films, polarized transmission spectrum revealed the change in symmetry of valance band. But polarized transmission spectrum of ZnO film reflected its intrinsic energy band structure. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/16649]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 周健华. γ-LiAlO2上非极性宽禁带半导体薄膜制备及其光谱特性研究[D]. 中国科学院上海光学精密机械研究所. 2007. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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