Ⅰ型-β无掩模激光直写光刻系统
文献类型：学位论文
| 作者 | 胡永璐 |
| 学位类别 | 硕士 |
| 答辩日期 | 2014 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 徐文东 |
| 关键词 | 无掩模光刻 激光直写 微纳加工 自动聚焦 刻写分辨率 |
| 其他题名 | Ⅰ-β Maskless Laser Direct Writing System |
| 中文摘要 | 传统的有掩模光刻技术正沿着从紫外到深紫外再到极紫外的技术路线快速发展，该技术已较为成熟，现也已广泛应用于微纳加工领域。但此技术的主要不足在于需要制作复杂的掩模版、掩模版上的灰尘等杂质对刻写精度会产生较大的影响。而且，随着分辨率要求的不断提高，特征尺寸的不断减小，个性化产品生产要求的不断增多，更新周期不断变短，这些必将共同导致掩模版的价格急剧上涨，其费用占总成本的比例也会随之不断上升。应运而生的无掩模光刻技术不需要制作掩膜版，这也就大幅度降低了生产成本，尽管还不能替代目前的主流光刻技术，但由于其成本低、生产周期短、灵活性高，在微纳加工领域也具有广阔的市场前景。 针对早期研制的Ⅰ型-α无掩模激光直写装置存在的刻写速度慢、功能不够完善等缺点，重新设计并搭建一套Ⅰ型-β无掩模激光直写光刻系统是本论文的主体和意义所在。本文主要内容包括： 第一章首先分析了无掩模光刻相对于掩模光刻的优势所在，接着简要介绍了各种无掩模光刻技术并指出了其中的激光直写光刻的优势。重点介绍了Ⅰ型-α无掩模激光直写装置的特点及存在的不足，由此引出本文的研究内容和目的。 第二章介绍了Ⅰ型-β无掩模激光直写光刻系统的系统结构，详细阐明了激光刻写模块、离焦检测模块、样品观察模块的结构和功能以及关键器件的选型、设计及其性能参数曲线等。 第三章从电子学角度出发，首先介绍了系统功能的整体设计架构，并根据该架构分别了搭建上位机和下位机系统，然后根据系统工作流程，对三大模块的电子学控制做了详细介绍。 第四章对系统各模块进行了分模块实验验证，并通过实验实际测试，找到了最佳的离焦量FES=0.02，采用此数值进行线宽测试和灰度图的刻写来验证系统的整体功能，并测得最小线宽在250nm以内。最后，对系统的应用特点和范围作了简要介绍。 |
| 英文摘要 | The traditional mask lithography is now rapidly developed along the UV-DUV-EUV lithography path. The technology is relatively mature and is widely used in the field of micro-nano processing. But the downside of this technology is that fabrication of masks is too complicated and the writing accuracy is reduced by impurity pollution on masks. Besides, with the continuous requirements of improvement of resolution, decreasing feature sizes, personalizing products and shortening update cycle, the price of masks is undoubtedly increasing rapidly, and its proportion of the total cost grows continuously. However, maskless lithography emerges as the times require and cost of production is substantially cut down without the need of making masks. Although it can not replace the current mainstream lithography techniques, it is mainly used in the micro-nano fabrication, small batch production of specific applications and has has a wide market prospect, because of its low cost, short production cycle and high flexibility. As the early developed Ⅰ- α maskless laser direct writing device has low writing speed and its function is not perfect, Ⅰ- β system is designed and constructed. The main content of this paper is listed as follows: In Chapter 1, the advantages of maskless lithography is analyzed, subsequently, different kinds of maskless lithography are briefly introduced and among which, superiority of laser direct writing technique is highlighted. Then, features and shortcomings of Ⅰ- α maskless laser direct writing device are focused on, which leads to the main content and purpose of this paper. In Chapter 2, the structure of Ⅰ- β maskless laser direct writing system is described. Structure and functions of laser direct writing module, defocus detection module, sample observation module are elaborated, along with selection, design and performance parameters of key components. In Chapter 3, from the point of view of electronic, the overall design of the system is introduced firstly, according to which the upper and lower computer systems are constructed respectively. Then the electronic control of three main modules are discussed in detail according to workflow of operation. In Chapter 4, each module of the system are verified by experiments. Through experiments, the best defocus value, FES, is found to be 0.02, based on which, line width is controlled to be less than 250 nm and gray scale images writing is realized, which both verify the overall function of the system. Finally, the features and scope of application are briefly introduced. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/16847]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 胡永璐. Ⅰ型-β无掩模激光直写光刻系统[D]. 中国科学院上海光学精密机械研究所. 2014. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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