蓝宝石晶体的位错缺陷及性能的各向异性研究
文献类型：学位论文
| 作者 | 施纯俊 |
| 学位类别 | 硕士 |
| 答辩日期 | 2015 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 杭寅 |
| 关键词 | 蓝宝石晶体 各向异性 位错 性能 |
| 其他题名 | Study on Anisotropy of Dislocation Defects and Properties of Sapphire Crystal |
| 中文摘要 | 蓝宝石晶体具有非常高的化学稳定性，在常温下耐强酸和强碱的腐蚀；在3～5μm波段具有很高的光学透过率，透光范围覆盖紫外、可见、近红外到中红外波段；高硬度和高强度，可以在高温环境中保持着高强度与高的稳定性；低的热膨胀系数，高的热导率，热稳定性高。蓝宝石晶体是航空航天和微电子、光电子产业重要的基础材料,且日益受到人们的重视。 目前生长大尺寸且高质量的蓝宝石单晶存在着较大的困难，本文通过对蓝宝石单晶的位错缺陷和性能的各向异性的研究，为优化大尺寸蓝宝石晶体的生长工艺技术和蓝宝石晶体的应用提供一定的指导意义。 本文主要内容包括以下几个方面： 1)蓝宝石晶体的位错腐蚀坑的形貌具有各向异性。C、A、M、R面蓝宝石晶片的位错腐蚀坑分别为等边三角形，菱形，等腰梯形和矩形。 2）采用泡生法、热交换法、导模法和提拉法生长的2英寸的C面蓝宝石单晶片的位错密度分别为8.11×102个/cm2，2.34×103个/cm2，2.28×104个/cm2，3.68×105个/cm2。从位错的密度来看，泡生法和热交换法生长的蓝宝石单晶的质量明显要优于其他两种方法生长的蓝宝石晶体。 3）采用泡生法、热交换法、导模法和提拉法生长的2英寸的C面蓝宝石单晶片的双晶摇摆曲线的半高宽分别为12.45"、28.41"、84.69"和165.82"，表明泡生法和热交换法生长的蓝宝石单晶具有良好的晶格完整性，而导模法和提拉法生长的蓝宝石单晶的晶格完整性较差。 4)蓝宝石晶体的热学性能具有明显的各向异性。当温度在298～1773K，蓝宝石晶体主热膨胀系数分别为α11=5.312×10-6 ～8.379×10-6 K-1,α33=6.008×10-6～9.317×10-6 K-1，r向热膨胀系数αr=5.402×10-6～8.821×10-6 K-1。通过计算得出其主热导率分别为?11=31.429～5.556W/(m·K)和?33=33.611～7.651W/(m·K),r向热导率?r=36.521～9.153W/(m·K)。 5）对于相同波长的光，采用导模法生长的c面蓝宝石单晶片的透射率要低于泡生法。相比导模法和提拉法，泡生法生长的蓝宝石晶体的拉曼光谱和其标准拉曼光谱基本一致。泡生法生长的蓝宝石晶体的光学均匀性要优于比提拉法。这些都表明泡生法生长的蓝宝石晶体的结构完整性较高。 6）蓝宝石晶体的硬度和强度都具有明显的各向异性。C面的维氏显微硬度值为2182，A面为2483，R面为2366，C面的抗弯强度为948MPa，A面为732MPa，R面为864MPa。 |
| 英文摘要 | Sapphire crystal has a very high chemical stability, corrosion resistance to acid and alkali at room temperature; It has a high optical transmittance in 3~5μm band , and the translucent covering ultraviolet, visible, near infrared to mid-infrared band ; With its high hardness and high strength, and its high strength can be maintained with high stability in high temperature environments; In addition, sapphire crystal has low coefficient of thermal expansion, high thermal conductivity and high thermal stability. Sapphire crystal is important basic materials of aerospace and microelectronics, optoelectronics industry , and increasing people's attention. Currently, there are great difficulties in the growth of large-size and high quality sapphire, and the paper studies the anisotropy of sapphire single crystal of dislocation defects and performance to provide some guidance for optimizing the growth of large-size sapphire crystal technology. The main contents of this thesis include the following aspects: 1)Dislocation etch pits morphology of sapphire crystal has anisotropic.The dislocation etch pits morphology of C, A, M, R-plane sapphire were an equilateral triangle, rhombus, isosceles trapezium and isosceles triangle,respectively. 2)Using Kyropoulos,Heat Exchange Method, Edge-defined Film-fed Growth and Czochralski ,the dislocation density of two inches of c-plane sapphire single crystal were 8.11×102cm-2,2.34×103cm-2,2.28×104cm-2,3.68×105cm-2,respectively. From the dislocation density, the quality of sapphire single crystal by Kyropoulos and Heat Exchange Method is significantly better than the other two methods grow sapphire crystal. 3)Using Kyropoulos,Heat Exchange Method, Edge-defined Film-fed Growth and Czochralski , the FWHM of double crystal rocking curve of two inches of c-plane sapphire single crystal were 12.45"、28.41"、84.69"and 165.82"，respectively.It Shows that sapphire single crystal has a good lattice integrity by Kyropoulos and Heat Exchange Method .But sapphire single crystal Grown by Edge-defined Film-fed Growth and Czochralski has a poor lattice integrity. 4)Thermal property of sapphire crystal has a significant anisotropy.The principal thermal expansion coefficients were measured to be α11=5.312×10-6 ～8.379×10-6 K-1 and α33 =6.008×10-6～9.317×10-6 K-1, the thermal expansion coefficient of r direction was measured to be αr=5.402×10-6 ～8.821×10-6 k-1,over the temperature range of 298～1773K. the principal thermal conductivity were calculated to be ?11=31.429～5.556W/(m·K) and ?33=33.611～7.651W/(m·K),the thermal conductivity of r direction was calculated to be ?r=36.521～9.153W/(m·K). 5)For the same wavelength, the transmittance of C-plane sapphire single crystal grown by Edge-defined Film-fed Growth is lower than C-plane sapphire single crystal grown by Kyropoulos method. Compared to Edge-defined Film-fed Growth and Czochralski method, the Raman spectroscopy of sapphire single crystal grown by Kyropoulos method consistent with its standard Raman spectroscopy. Optical homogeneity of sapphire crystal grown by Kyropoulos method is superior to Czochralski method. All these indicate that sapphire single crystal grown by Kyropoulos method has high structural integrity . 6)Hardness and strength of sapphire crystal has significant anisotropy. Vickers hardness of c, a, r-plane sapphire is 2182,2483 and 2366,respectively.The bending strength of c, a, r-plane sapphire is 948MPa, 732MPa, 864MPa.respectively. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/16888]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 施纯俊. 蓝宝石晶体的位错缺陷及性能的各向异性研究[D]. 中国科学院上海光学精密机械研究所. 2015. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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