极紫外光刻含缺陷掩模理论模型的建立和仿真验证
文献类型：学位论文
| 作者 | 管文超 |
| 学位类别 | 硕士 |
| 答辩日期 | 2015 |
| 授予单位 | 中国科学院上海光学精密机械研究所 |
| 导师 | 王向朝 |
| 关键词 | 极紫外光刻 掩模衍射场 缺陷 快速仿真计算 米散射 |
| 其他题名 | Modeling and Simulation of Defective Mask in Extreme-Ultraviolet Lithography |
| 中文摘要 | 光刻是极大规模集成电路制造的关键技术之一，光刻分辨率决定集成电路芯片的特征尺寸。极紫外（EUV）光刻采用13.5nm波长的曝光光源提高分辨率，是深紫外光刻向更短波段的合理延伸，被认为是最具有发展前景的下一代光刻技术。掩模缺陷是阻碍EUV光刻实现量产的主要难题之一，目前主要采用一定的方法补偿缺陷对光刻成像的影响。准确快速的仿真缺陷对光刻成像的影响是实现缺陷补偿的先决条件。另一方面，由于EUV光刻实验的高成本，在EUV光刻技术研发过程中，需要借助光刻仿真手段降低研发成本、缩短研发周期。掩模衍射场的仿真计算是极紫外光刻仿真的重要环节。含缺陷掩模衍射场严格仿真方法的仿真精度高，但计算量大、计算速度慢，且无法得出衍射谱解析表达式。现有的快速仿真方法通常采用数值计算方法，限制了其速度的进一步提高，也无法给出衍射谱解析表达式。为实现含缺陷掩模衍射场快速高精度仿真，本文建立了EUV光刻含缺陷掩模理论模型并进行了研究，主要内容包含以下几个方面: 1. 研究了现有的掩模衍射场仿真方法。从计算量、计算时间和计算精度上对严格仿真计算方法如时域有限差分法、波导法，以及快速仿真计算方法如域分解法、掩模结构分解法进行了比较分析，为建立含缺陷掩模衍射理论模型奠定基础。 2. 基于米散射理论建立了含振幅型缺陷EUV光刻掩模的理论模型。以特征尺寸为22nm、周期为44nm、含半径为1至6nm振幅型缺陷接触孔图形为例进行了仿真验证。与Dr.LiTHO波导法严格仿真相比，该模型的仿真速度提高了约80倍，CD仿真误差小于1nm。仿真结果表明在保证计算精度的同时本模型的计算速度明显提高。同时，得到了含振幅型缺陷掩模衍射谱的解析表达式，为含振幅型缺陷掩模衍射效应的解析分析奠定了理论基础。 3. 基于米散射理论建立了含相位型缺陷EUV光刻掩模的理论模型。仿真结果表明在保证计算精度的同时本模型的计算速度明显提高。同时，得到了含相位型缺陷掩模衍射谱的解析表达式，为含相位型缺陷掩模衍射效应的解析分析奠定了理论基础。 |
| 英文摘要 | Lithography is the key technology in the manufacturing of ultra-large scale integrated circuits. Resolution of lithography determines the critical dimension (CD) of the integrated circuits. Extreme-ultraviolet (EUV) lithography which scales the resolution by using exposure wavelength at 13.5nm is considered to be one of the most promising Next-Generation Lithographys. Mask defects are a major roadblock to EUV lithography adoption in high volume manufacturing. Defect compensation methods are usually employed to compensate the influences of the defects on lithography imaging. Besides, EUV lithography experiments are usually of high cost. In this condition, EUV lithography simulation plays an important role in reducing the cost of development and accelerating the process of development. Simulation of mask diffraction spectrum is an important segment in EUV lithography simulation. Rigorous simulation methods are accurate while they are always complex and time-consuming. The fast simulation methods are usually based on numerical computation, which limits the further improvement of their speed. Both the rigorous simulation methods and the fast simulation methods can not generate analytical expressions of the defective mask diffraction spectrum. To realize faster and accurate EUV lithography simulation, modeling of defective mask is studied. The following contents are covered: 1. Simulation methods of EUV mask diffraction spectrum are analyzed. The accuracy and speed of Rigorous methods, such as FDTD and Waveguide method, and fast methods, such as domain decomposition method and mask structure decomposition method, are compared. It lays the foundation for the modeling of defective mask. 2. A model based on Mie scattering theory is built to simulate the spectrum of EUV mask that contains amplitude defect. The model is verified by simulations in which a contact-hole mask with an amplitude defect is used. The CD and pitch of the mask are 22nm and 44nm respectively. The values of radius of the defects are set from 1nm to 6nm. Compared with Waveguide method, the simulation speed of the proposed model is approximately improved by 80 times, while the CD error is below 1nm. The simulation results demonstrate that this model reduces the simulation time while keeps the accuracy. An analytical expression of the diffraction spectrum of mask that contains amplitude defect is obtained, which lays the foundation for the theoretical analysis of the defective mask diffraction effects. 3. A model based on Mie scattering theory is built to simulate spectrum of EUV mask that contains phase defect. The simulation results show that the model reduces the simulation time while keeps the accuracy. An analytical expression of the diffraction spectrum of mask that contains phase defect is obtained, which lays the foundation for the theoretical analysis of the defective mask diffraction effects. |
| 语种 | 中文 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/16922]  |
| 专题 | 上海光学精密机械研究所_学位论文 |
| 推荐引用方式 GB/T 7714 | 管文超. 极紫外光刻含缺陷掩模理论模型的建立和仿真验证[D]. 中国科学院上海光学精密机械研究所. 2015. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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